Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=(--)100V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)0.5A
VCE=(--)5V, IC=(--)3A
VCE=(--)10V, IC=(--)0.5A
VCB=(--)10V, f=1MHz
IC=(--)2A, IB=(--)0.2A
VCE=(--)2A, IC=(--)0.2A
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10μA, IC=0A
See specified Test Circuit.
(-
-)120
(-
-)100
(--)6
100
(800)900
50
70*
40
(130)180
(65)40
(--200)150
(-
-)0.9
(--500)400
(-
-)1.2
MHz
pF
mV
V
V
V
V
ns
ns
ns
Ratings
min
typ
max
(--)1
(--)1
400*
Unit
μA
μA
*
: The 2SB1216/2SD1816 are classified by 0.5A hFE as follows :
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