JMnic
Product Specification
Silicon PNP Power Transistors
2SB511
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD325
・Low
collector saturation voltage
APPLICATIONS
・Designed
for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current -peak
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
10
150
-50~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-35
-35
-5
-1.5
-3.0
1.75
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB511
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA; I
B
=0
-35
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-1.5A; I
B
=-0.15A
-1.0
V
V
BE
Base-emitter on voltage
I
C
=-1A ; V
CE
=-5V
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-20V; I
E
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-0.1
mA
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-2V
40
320
h
FE-2
DC current gain
I
C
=-0.1A ; V
CE
=-2V
35
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-5V
8
MHz
h
FE-1
Classifications
C
40-80
D
60-120
E
100-200
F
160-320
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB511
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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