JMnic
Product Specification
Silicon NPN Power Transistors
2SC1827
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SA769
・Collector
current :I
C
=4A
・Collector
dissipation
:P
C
=30W@T
C
=25
℃
APPLICATIONS
・For
use in low frequency power
amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
80
80
5
4
30
150
-55~150
UNIT
V
V
V
A
W
℃
℃
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC1827
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=25mA ;I
B
=0
80
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=0.1mA ;I
E
=0
80
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=0.1mA ;I
C
=0
5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=3A; I
B
=0.3A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=3A ;I
B
=0.3A
1.5
V
I
CBO
Collector cut-off current
V
CB
=80V;I
E
=0
10
μA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
10
μA
h
FE
DC current gain
I
C
=1A ; V
CE
=4V
60
240
f
T
Transition frequency
I
C
=0.5A ; V
CE
=2V
8
MHz
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1827
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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