Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC1913 2SC1913A
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SA913/913A
・Large
collector power dissipation
・High
V
CEO
APPLICATIONS
・Audio
frequency high power driver
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
2SC1913
Collector-base voltage
2SC1913A
2SC1913
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Collector-emitter voltage
2SC1913A
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
180
5
1
1.5
15
150
-55~150
V
A
A
W
℃
℃
Open emitter
180
150
V
CONDITIONS
VALUE
150
V
UNIT
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SC1913
I
C
=0.1mA ,I
B
=0
2SC1913A
I
E
=10μA ,I
C
=0
CONDITIONS
2SC1913 2SC1913A
MIN
150
TYP.
MAX
UNIT
V
CEO
Base-emitter
breakdown voltage
V
180
5
1.0
V
V
EBO
Emitter-base breakdown voltage
2SC1913
V
CEsat
Collector-emitter
saturation voltage
I
C
=0.3A; I
B
=30mA
2SC1913A
I
C
=0.3A; I
B
=30mA
V
CB
=120V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=150mA ; V
CE
=10V
I
C
=500mA ; V
CE
=5V
I
E
=0 ; V
CB
=100V;f=1MHz
I
C
=50mA ; V
CE
=10V
120
65
50
15
1.5
1.5
1
1
330
V
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
V
μA
μA
pF
MHz
h
FE-1
Classifications
P
65-110
Q
90-155
R
130-220
S
185-330
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1913 2SC1913A
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
JMnic
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