JMnic
Product Specification
Silicon NPN Power Transistors
2SC1942
DESCRIPTION
・With
TO-3 package
・High
breakdown voltage
・High
speed switching
APPLICATIONS
・For
TV horizontal output applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
1500
800
6
3
50
150
-65~150
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
2.5
UNIT
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC1942
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A ; I
B
=0
800
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=1mA ; I
C
=0
6
V
V
CEsat
Collector-emitter saturation voltage
I
C
=2.5A; I
B
=0.8A
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=2.5A; I
B
=0.8A
1.5
V
μA
I
CBO
Collector cut-off current
V
CB
=600V; I
E
=0
10
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
10
μA
h
FE
DC current gain
I
C
=1 A ; V
CE
=5V
8
40
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1942
Fig.2 Outline dimensions
3
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