JMnic
Product Specification
Silicon NPN Power Transistors
2SC2371
DESCRIPTION
・With
TO-126 package
・High
Voltage
・High
frequency
APPLICATIONS
・For
TV chroma output and vertical
output applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
10
150
-40~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
300
300
6
0.1
0.2
1.25
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC2371
MAX
UNIT
V
CEsat
Collector-emitter saturation voltage
I
C
=30mA ;I
B
=3m A
1.5
V
V
BE
Base-emitter on voltage
I
C
=10mA ; V
CE
=10V
1.2
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=100μA;I
E
=0
300
V
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=1mA; I
B
=0
300
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=100μA; I
C
=0
6
V
h
FE
DC current gain
I
C
=10mA ; V
CE
=10V
40
250
μA
I
CBO
Collector cut-off current
V
CB
=200V; I
E
=0
0.1
I
EBO
Emitter cut-off current
V
EB
=4V; I
C
=0
0.1
μA
C
OB
Output capacitance
I
E
=0; V
CB
=30V;f=1MHz
3
pF
f
T
Transition frequency
I
E
=10mA ; V
CB
=30V
50
MHz
2
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