JMnic
Product Specification
Silicon NPN Power Transistors
2SC2810
DESCRIPTION
・With
TO-220C package
・High
voltage,High speed
APPLICATIONS
・For
power switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
7
7
14
50
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=10mA ; I
B
=0
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=3A; I
B
=0.6A
I
C
=3A; I
B
=0.6A
V
CB
=500V ;I
E
=0
V
EB
=7V; I
C
=0
I
C
=3A ; V
CE
=4V
I
C
=0.5A ; V
CE
=12V
10
18
MIN
400
500
7
2SC2810
TYP.
MAX
UNIT
V
V
V
0.5
1.3
10
10
V
V
μA
μA
MHz
2
Embedded System
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