JMnic
Product Specification
Silicon NPN Power Transistors
2SC3210
DESCRIPTION
・With
TO-3PFa package
・Low
collector saturation voltage
・High
breakdown voltage
APPLICATIONS
・For
high speed switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
3
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
10
20
5
100
W
UNIT
V
V
V
A
A
A
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3210
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=0.2A;L=25mH
I
C
=5A ;I
B
=1A
I
C
=5A ;I
B
=1A
V
CB
=500V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V
15
8
11
MHz
MIN
400
1.0
1.5
100
100
TYP.
MAX
UNIT
V
V
V
μA
μA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=5A; V
CC
=100V
I
B1
=-I
B2
=1A
1.0
2.5
1.0
μs
μs
μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3210
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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