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2SC4915-R

Description
High Frequency Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size294KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC4915-R Overview

High Frequency Amplifier Applications

2SC4915-R Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.02 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
Minimum power gain (Gp)17 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)550 MHz
Base Number Matches1
2SC4915
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4915
High Frequency Amplifier Applications
FM, RF, MIX, If Amplifier Applications
Small reverse transfer capacitance: C
re
= 0.55 pF (typ.)
Low noise figure: NF = 2.3dB (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
40
30
4
20
4
100
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-2H1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Weight: 2.4 mg (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
Symbol
I
CBO
I
EBO
h
FE
(Note)
C
re
f
T
C
c
½rbb’
NF
G
pe
Test Condition
V
CB
=
40 V, I
E
=
0 A
V
EB
=
4 V, I
C
=
0 A
V
CE
=
6 V, I
C
=
1 mA
V
CB
=
6 V, f
=
1 MHz
V
CE
=
6 V, I
C
=
1 mA
V
CE
=
6 V, I
E
= −1
mA, f
=
30 MHz
V
CC
=
6 V, I
E
= −1
mA,
f
=
100 MHz, Figure 1
Min
40
260
17
Typ.
0.55
550
2.3
23
Max
0.1
0.5
200
20
5.0
pF
MHz
ps
dB
dB
Unit
μA
μA
Note: h
FE
classification R: 40~80, O: 70~140, Y: 100~200
1
2007-11-01

2SC4915-R Related Products

2SC4915-R 2SC4915-O 2SC4915-Y
Description High Frequency Amplifier Applications High Frequency Amplifier Applications High Frequency Amplifier Applications
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.02 A 0.02 A 0.02 A
Collector-emitter maximum voltage 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 70 100
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 240 240
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.1 W 0.1 W 0.1 W
Minimum power gain (Gp) 17 dB 17 dB 17 dB
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 550 MHz 550 MHz 550 MHz
Base Number Matches 1 1 1

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