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2SD669A

Description
1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
ManufacturerWINNERJOIN
Websitehttp://www.wej.cn/
Download Datasheet Parametric Compare View All

2SD669A Overview

1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR

2SD669A Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current1.5 A
Maximum Collector-Emitter Voltage160 V
Processing package descriptionTO-126MOD, 3 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Maximum ambient power consumption1 W
Transistor typeUniversal small signal
Minimum DC amplification factor30
Rated crossover frequency140 MHz

2SD669A Related Products

2SD669A TO-126C
Description 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3
Transistor polarity NPN NPN
Maximum collector current 1.5 A 1.5 A
Maximum Collector-Emitter Voltage 160 V 160 V
Processing package description TO-126MOD, 3 PIN TO-126MOD, 3 PIN
state TRANSFERRED TRANSFERRED
packaging shape Rectangle Rectangle
Package Size Flange mounting Flange mounting
Terminal form THROUGH-hole THROUGH-hole
Terminal location single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure single single
Shell connection isolation isolation
Number of components 1 1
transistor applications amplifier amplifier
Transistor component materials silicon silicon
Maximum ambient power consumption 1 W 1 W
Transistor type Universal small signal Universal small signal
Minimum DC amplification factor 30 30
Rated crossover frequency 140 MHz 140 MHz
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