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30KP100

Description
30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size273KB,3 Pages
ManufacturerETC2
Download Datasheet View All

30KP100 Overview

30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

30KP33 thru 30KP400CA
Transient Voltage Suppressor
Breakdown Voltage 33 to 400 V
Peak Pulse Power
30KW
Features
CASE: R-6
Breakdown Voltages (V
BR
) from 33 to 400V
30KW peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.05%
Fast Response Time
Low incremental surge resistance
Excellent clamping capability
Available in uni-directional and bi-directional
High temperature soldering guaranteed: 265
/10
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
Application
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
@
Symbol
P
PPM
I
PPM
Conditions
Peak pulse power capability with a 10/1000μs
Peak pulse current with a 10/1000μs
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on IC
S
, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication
Case:
Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals:
Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking:
Body marked with part number
Polarity:
Band denotes cathode. Bidirectional not
marked.
Weight:
2.1g(Approximately)
25 C unless otherwise specified
O
Mechanical Data
Value
30
SEE TABLE1
7
1.61
17.5
77.5
-65 to +150
Unit
KW
A
W
W
℃/W
℃/W
Steady state power dissipation at T
L
=27.5℃ ,Lead lengths 0.375”(10mm)
P
M(AV)
R
θJL
R
θJA
T
J,
T
STG
Steady state power dissipation at T
A
=25℃ when mounted on FR4 PC
described for thermal resistance
Thermal resistance junction to lead
Thermal resistance junction to ambient
Operating and Storage Temperature
Document Number: 30KP33 thru 30KP400CA
Feb.29, 2012
www.smsemi.com
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