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SLVE2.8

Description
300 W, BIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size78KB,7 Pages
ManufacturerSEMTECH
Websitehttp://www.semtech.com
Download Datasheet Parametric Compare View All

SLVE2.8 Overview

300 W, BIDIRECTIONAL, SILICON, TVS DIODE

SLVE2.8 Parametric

Parameter NameAttribute value
MakerSEMTECH
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage3.3 V
Maximum clamping voltage5.3 V
ConfigurationSINGLE
Minimum diode capacitance100 pF
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak reverse power dissipation300 W
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityBIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2.8 V
Maximum reverse current1 µA
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationDUAL
EPD TVS™ Diodes For
ESD and Latch-Up Protection
PROTECTION PRODUCTS
Description
The SLV series of transient voltage suppressors are
designed to protect low voltage, state-of-the-art CMOS
semiconductors from transients caused by electro-
static discharge (ESD), cable discharge events (CDE),
lightning and other induced voltage surges.
The devices are constructed using Semtech’s propri-
etary EPD process technology. The EPD process pro-
vides low standoff voltages with significant reductions
in leakage currents and capacitance over silicon-
avalanche diode processes. The SLVE2.8 & SLVG2.8
are in a SOT-143 package and have a low 2.8V work-
ing voltage. They may be used to protect one line in
differential or common mode. The “flow-thru” design
minimizes trace inductance and reduces voltage
overshoot associated with ESD events.
The SLV is specifically designed to protect low voltage
components such as Ethernet transceivers, laser
diodes, ASICs, and high-speed RAM. The low clamping
voltage of the SLV minimizes the stress on the pro-
tected IC.
The SLV series TVS diodes will exceed the surge re-
quirements of IEC 61000-4-2, Level 4.
SLVE2.8 & SLVG2.8
Features
!
300 Watts peak pulse power (tp = 8/20µs)
!
Transient protection for low voltage data lines to
IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
IEC 61000-4-5 (Lightning) 24A (tp = 8/20µs)
Protects one line
Comprehensive pin out for easy board layout
Low capacitance
Low leakage current
Low operating and clamping voltages
Solid-state EPD TVS process technology
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Mechanical Characteristics
JEDEC SOT-143 package
Molding compound flammability rating: UL 94V-0
Marking : Marking code
Packaging : Tape and Reel per EIA 481
Applications
ESD and Latch-up Protection
Analog Inputs
WAN/LAN Equipment
Low Voltage ASICs
Desktops, Servers, Notebooks & Handhelds
Portable Instrumentation
Base Stations
Laser Diode Protection
Schematic & Pin Configuration
Schematic & PIN Configuration
4
1
1
4
2
3
2
3
SLVG2.8 (Top View)
Revision 1/18/2001
1
SLVE2.8 (Top View)
www.semtech.com

SLVE2.8 Related Products

SLVE2.8 SLVG2.8 SLVE2.8TC
Description 300 W, BIDIRECTIONAL, SILICON, TVS DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Reach Compliance Code unknow unknow -
ECCN code EAR99 EAR99 -
Minimum breakdown voltage 3.3 V 3.3 V -
Maximum clamping voltage 5.3 V 5.3 V -
Configuration SINGLE SINGLE -
Minimum diode capacitance 100 pF 50 pF -
Diode component materials SILICON SILICON -
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE -
JESD-30 code R-PDSO-G4 R-PDSO-G4 -
Maximum non-repetitive peak reverse power dissipation 300 W 300 W -
Number of components 1 1 -
Number of terminals 4 4 -
Maximum operating temperature 150 °C 150 °C -
Minimum operating temperature -55 °C -55 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
polarity BIDIRECTIONAL UNIDIRECTIONAL -
Certification status Not Qualified Not Qualified -
Maximum repetitive peak reverse voltage 2.8 V 2.8 V -
Maximum reverse current 1 µA 1 µA -
surface mount YES YES -
technology AVALANCHE AVALANCHE -
Terminal form GULL WING GULL WING -
Terminal location DUAL DUAL -
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