^zmi-donaiictoi iJ-^ioaucti,, Una,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
S3700 Series
5-A Silicon Controlled Rectifiers
For Inverter Applications
Features:
•
600V. 125'C Tj operating
• High dv/dt and dl/dt capability
•
Low switching losses
• High pulse-current capability
• Low forward and reverse leakage
•
SIPOS oxide glass multilayer passivation system
•
Advanced unisurface construction
• Precise Ion-Implanted diffusion source
TERMINAL DESIGNATIONS
•OTTOM VIEW
MDECTO-ttlAA
MAXIMUM RATINGS./»6»Ofufe-MM/mum
Values:
Non-repetitive peck raven* voltage:*
Gate Open
Non-repetitive peak off-state voltage:*
GateOpen
Repetitive peak reverse voltage:*
Gate Open
Repetitive peak off-state voltage:*
Gate Open
On-state current:
T
c
=B5"Ci conduction angle = 180":
HMS
Average
For other conditions
Peak surge (non-repetitive) on-state current:
For one full cycle of applied principal voltage, Tc = 85'C
60 Hz (sinusoidal)
SO Hz (sinusoidal)
For more than one full cycle of applied principal voltage
Rate of change of on-state current
VD = VDMU. Io7 = 50mA. t, = 0.1/ffl
Fusing current (for SCR protection):
Tj =
-40
to 1WC. t = 1 to 8.3 ms
Gate power dissipation:*
Peak Forward (for 100s max.. See Fig. 7)
Peak Reverse (for 10/n max.. See Fig, 8)
Average (averaging time —10 ms max.)
,
Temperature Range:f
Storage
Operating (Case)
Pin Temperature (During soldering):
At distances > 1/32 In. (0.8 mm) from seating plane
for 10 s max
83700B
VMW
VMM
VWHM
VDMM
Innnu
|TM«
I
T
«M
300
300
200
200
S3700D
500
83700M
700
500
400
400
700
600
600
.3.2
.
i. 3 & 4 .
.80.
.65.
- See Fig. 5 .
dl/dt
m
.200.
POM
P
M
u
P
0
«»i
T«
T
6
^^
-
-
IS
IS
W
Ul
nc
-4fl*0 1ffO
«/
T.
-40 to 175
...
°C
• These values do not apply If there Is a positive gate signal. Gate must be open or negatively biased.
• Any product of gate current and gate voltage which results in a gate power less then the maximum Is permitted,
t For temperature measurement reference point, aee
Dimensions! Outline.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
S3700 Series
ELECTRICAL CHARACTERISTICS
At Minimum Ritingi Unleu Othwwiw SptcifM *nd tt Indictttd C»H Temptraturt (T
c
)
LIMITS
CHARACTERISTIC
SYMBOL
FOR ALL TYPES
Except u Specified
UNITS
MIN.
Peak Off-State Current:
(Gate open, T
c
=125'C)
Forward Current (I
OOM
) at V
D
- V
DROM
Reverse Current (I
ROM
) at V
R
• VBRQM
Instantaneous On-State Voltage:
i
T
= 30 A (peak), T
c
- 25
8
C
For other conditions
Instantaneous Holding Current:
Gate open, T^ - 25°C
Critical Rate of Rise of Off-State Voltage :
V
D
- VQRQM. exponential voltage rile,
Gate open, TC - 1Z5°C
DC Gate Trigger Current:
V
0
- 1 2 V ( d c ) , R
L
= 30n,T
c
-25°C
For other conditions
DC Gate Trigger Voltage:
V
D
= 12 V (del, R
L
• 30 O, T
c
- 25°C
For other conditions
Gate Controlled Turn-On Time:
(Delay Time + Rile Time)
TYP.
MAX
I
0
OM
IRQM
V
T
0.5
0,3
2.2
1.5
3
See
Fig.6
mA
20
50
rnA
dv/dt
100
250
IS
40
See Fig.7
| 3.5
See Fig. 7
mA
I
GT
V
GT
1.8
For VDX • VDROM. 'GT * soo mA, t,»o.i
in,
T
- 2 A (peak).
T
c
=
25°C
(See Fig. 10)
0.7
Circuit Commutated Turn-Off Time:
i-r = 2 A, pulse duration - 50 «s,
dv/dt - 100 wi's, -di/dt = -10 A/us, I
G1
- - 100 mA,
V
GT
- 0 V (at turn-off). T
c
- 80°C (See Fig. 13) .... |
Thermal Resistance:
Junction-to-Case
Junction-to-Amtaient
l
q
RtfJC
R0JA
8
40
»C/W
°CA/V
.
LCU • llbllMl MURWCTnt
*4
fig. 1-power dissipation vs. average
on-state current.
Fig. l-Dlulpttion n. repetition ntt,
Microcontroller MCU
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