BC160-6 datasheet, PDF - EEWORLD Datasheet

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BC160-6: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,; CategoryDiscrete semiconductor The transistor; File Size36KB，1 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BC160-6 Overview

Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,

BC160-6 Parametric

Parameter Name	Attribute value
Objectid	1404817952
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	30 pF
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.75 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

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BC160-6 Related Products

	BC160-6	BC168B	BC160-10	BC161-10	BC161-6	BC107A	BC109B
Description	Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,	Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
Objectid	1404817952	1404817967	1404817947	1404817956	1404817961	1404817905	1404817922
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	0.5 A	1 A	1 A	1 A	0.2 A	0.2 A
Collector-based maximum capacity	30 pF	4.5 pF	30 pF	30 pF	30 pF	4.5 pF	4.5 pF
Collector-emitter maximum voltage	40 V	20 V	40 V	60 V	60 V	45 V	20 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	180	63	63	40	120	180
JEDEC-95 code	TO-39	TO-92	TO-39	TO-39	TO-39	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-PBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	175 °C	150 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	METAL	PLASTIC/EPOXY	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	NPN	PNP	PNP	PNP	NPN	NPN
Maximum power dissipation(Abs)	0.75 W	0.5 W	0.75 W	0.75 W	0.75 W	0.6 W	0.6 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	150 MHz	50 MHz	50 MHz	50 MHz	150 MHz	150 MHz

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