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BA483

Description
Band-switching diodes
CategoryDiscrete semiconductor    diode   
File Size124KB,4 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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BA483 Overview

Band-switching diodes

BA483 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknow
Diode component materialsSILICON
Diode typeMIXER DIODE
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Band-switching diodes
FEATURES
• Continuous reverse voltage:
max. 35V
• Continuous forward current:
max. 100mA
• Low diode capacitance:
max. 1.0 to 1.6pF
• Low diode forward resistance:
max. 0.7 to 1.2 Q.
The diodes are type branded.
BA482; BA483; BA484
DESCRIPTION
Planar high performance band-switching diode in a hermetically sealed glass
SOD68 (DO-34) package.
APPLICATION
• VHP television tuners.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
MIN.
-
-
-65
-
MAX.
35
100
V
UNIT
mA
VB
IF
T»|g
+150
150
«c
«C
Tj
ELECTRICAL CHARACTERISTICS
Tj« 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
reverse current
CONDITIONS
IF » 100 mA; see Fig. 2
TYP.
-
-
-
0.8
0.7
1.0
MAX.
1.2
100
1
1.2
1.0
1.6
0.7
1.2
1.2
V
UNIT
V
F
IR
see Fig.3
V
n
-20V
V
R
= 20V;T
mb
-75»C
f - 1 to 100 MHz; V
R
- 3 V; see Fig.4
nA
jiA
pF
PF
PF
Q
Q
Q
c
d
TO
diode capacitance
BA482
BA483
BA484
diode forward resistance
BA482
BA483
BA484
IP - 3 mA; f - 200 MHz; see Fig. 5
0.6
0.8
0.8
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BA483 Related Products

BA483 BA482 BA484
Description Band-switching diodes Band-switching diodes Band-switching diodes
Maker New Jersey Semiconductor New Jersey Semiconductor -
Reach Compliance Code unknow unknow -
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