TRANSISTOR,BJT,NPN,45V V(BR)CEO,100MA I(C),TO-92
| Parameter Name | Attribute value |
| Maximum collector current | 0.1000 A |
| state | Active |
| structure | Single |
| Minimum DC amplification factor | 200 |
| Maximum operating temperature | 150 Cel |
| larity_channel_type | NPN |
| wer_dissipation_max__abs_ | 0.3500 W |
| sub_category | Other Transistors |
| surface mount | NO |
| Rated crossover frequency | 150 MHz |
| BC238B | BC237A | BC237B | BC237C | BC238C | BC239 | BC239C | BC237 | |
|---|---|---|---|---|---|---|---|---|
| Description | TRANSISTOR,BJT,NPN,45V V(BR)CEO,100MA I(C),TO-92 | TRANSISTOR,BJT,NPN,45V V(BR)CEO,100MA I(C),TO-92 | TRANSISTOR,BJT,NPN,45V V(BR)CEO,100MA I(C),TO-92 | TRANSISTOR,BJT,NPN,45V V(BR)CEO,100MA I(C),TO-92 | TRANSISTOR,BJT,NPN,45V V(BR)CEO,100MA I(C),TO-92 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR | RF SMALL SIGNAL TRANSISTOR | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| Maximum collector current | 0.1000 A | 0.1000 A | 0.1000 A | 0.1000 A | 0.1000 A | - | - | - |
| state | Active | Active | Active | Active | Active | - | ACTIVE | - |
| structure | Single | Single | Single | Single | Single | - | - | - |
| Minimum DC amplification factor | 200 | 200 | 200 | 200 | 200 | - | - | - |
| Maximum operating temperature | 150 Cel | 150 Cel | 150 Cel | 150 Cel | 150 Cel | - | - | - |
| larity_channel_type | NPN | NPN | NPN | NPN | NPN | - | - | - |
| wer_dissipation_max__abs_ | 0.3500 W | 0.3500 W | 0.3500 W | 0.3500 W | 0.3500 W | - | - | - |
| sub_category | Other Transistors | Other Transistors | Other Transistors | Other Transistors | Other Transistors | - | - | - |
| surface mount | NO | NO | NO | NO | NO | - | - | - |
| Rated crossover frequency | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz | - | - | - |