Jb£mi-Conaucto^ Lpioaucti, Line
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BC372, BC373
High Voltage
Darlington Transistors
NPN Silicon
COLLECTOR 3
MAXIMUM RATINGS
Rating
Collector -Emitter Voltage
BC372
BC373
Collector -Base Voltage
BC372
BC373
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Symbol
RHJA
Max
200
Symbol
VCEO
Value
100
80
Unit
Vdc
EMITTER 1
VCES
Vdc
100
80
12
1.0
625
5.0
1.5
12
-55 to +150
Vdc
Adc
mW
mW/°C
W
mW/°C
MARKING
DIAGRAM
VEBO
Ic
PD
PD
T
J.
T
stg
TO-92
°c
BC37x = Device Code
x = 2 or 3
A
= Assembly Location
Y
= Year
WW
= Work Week
Unit
°C/W
°c/w
83.3
Rfljc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BC372, BC373
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage*
1
)
(l
c
= 100uAdc, I
B
= 0)
Collector -Base Breakdown Voltage
(l
c
= 100uAdc, I
E
= 0)
Emitter- Base Breakdown Voltage
(I
E
= 10 uAdc, l
c
= 0)
Collector Cutoff Current
(VCB = 80 Vdc, I
E
= 0)
(V
C
B = 60 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
E B
=10V, l
c
= 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(l
c
= 250 mAdc, V
CE
= 5.0 Vdc)
(l
c
= 100 mAdc, V
CE
= 5.0 Vdc)
Collector -Emitter Saturation Voltage
(l
c
= 250 mAdc, I
B
= 0.25 mAdc)
Base - Emitter Saturation Voltage
(l
c
= 250 mAdc, I
B
= 0.25 mAdc)
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(l
c
= 100 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB =
1
0 Vdc, I
E
= 0, f = 1 .0 MHz)
Noise Figure
(l
c
= 1 .0 mAdc, V
CE
= 5.0 Vdc, R
g
= 1 00 kQ, f = 1 .0 kHz)
1. Pulse Test: Pulse Width = 300 us, Duty Cycle 2.0%.
BC372
BC373
V
(BR)CES
Symbol
Min
Typ
Max
Unit
Vdc
100
80
100
80
BC372
BC373
V(BR)CBO
_
-
-
_
Vdc
_
-
Vdc
nAdc
BC372
BC373
V(BR)EBO
12
'CBO
_
!EBO
~
_
-
100
100
100
riAdc
"RE
K
8.0
10
-
-
-
-
1.0
1.4
-
160
1.1
2.0
VcE(sat)
Vdc
Vdc
V
BE(sat)
f
T
Cob
100
-
-
200
10
20
-
25
-
MHz
PF
dB
NF
BC372, BC373
PACKAGE DIMENSIONS
TO-92 (TO-226)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
MILLIMETERS
SECTION X-X
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
MIN
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
MAX
0.205
0.210
0.165
0.021
0.055
0.105
0.020
MIN
4.45
4.32
3.18
MAX
5.20
5.33
4.19
0.407
1.15
2.42
0.39
0.533
1.39
2.66
0.50
^__
—
0.105
0.100
12.70
6.35
2.04
—
—
2.66
2.54
—
0.115
0.135
—
2.93
3.43
„_
_—
—
STYLE 1:
PIN1. EMITTER
2. BASE
3. COLLECTOR
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