, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BCY70
BCY71/BCY72
GENERAL PURPOSE APPLICATIONS
DESCRIPTION
The BCY70, BCY71 and BCY72 are silicon planar
epitaxial PNP transistors in Jedec TO-18 metaJ
case.
Ok.
TO-18
INTERNAL SCHEMATIC DIAGRAM
PNP
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
ICM
Parameter
BCY70
-50
-40
Value
BCY71
-45
-45
-5
BCY72
-25
-25
Unit
V
V
V
mA
mW
:
C
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (le = 0)
Emitter-base Voltage (Ic = 0}
Collector Peak Current
Total Power Dissipation at T
am6
s 25 °C
Ptol
Storage and Junction Temperature
Tsto, T,
Pulsed : pulse duration = 300 us. duty cyde = 1 %.
-200
350
- 65 to 200
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IHbHMALDATA
Rth J-C83B
Rth j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
150
500
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C unless otherwise specified)
Symbol
ICES
Parameter
Collector Cutoff Current
(V
B
e=0)
Test Conditions
For BCY70
VCE =-20 V
VCE = - 50 V
For BCY71
VCB = - 20 V
VCB = - 45 V
For BCY72
VCB = - 20 V
VCB = - 25 V
VEB = - 5 V
lc =- 10 mA
l
c
=- 50 mA
lc =- 10 mA
For BCY70 and
l
c
=-50 mA
For BCY70
l
c
=-0,1 mA
lc = - 1 mA
lc = - 1 0 m A
l
c
= - 50 mA
For BCY71
l
c
=-0.01 mA
l
c
=-0.1 mA
l
c
« - 1 mA
lc =- 10mA
lc = - 5 0 m A
For BCY72
l
c
= - 1 mA
lc =- 10mA
lc = - 1 mA
f = 1 kHz
lc =-0,1 mA
f = 10.7 MHz
IB =- 1 mA
IB = - 5 mA
IB =- 1 mA
BCY71 Only
IB =- 5 mA
Mln.
Typ.
Max.
- 10
-500
-100
- 10
-100
- 10
-10
Unit
nA
nA
nA
HA
nA
HA
HA
V
V
V
V
IEBO
VCE (sat)*
VBE(sat)*
Emitter cutoff Current
Oo-O)
Collector-emitter Saturation
Voltage
Base-Emitter Saturation Voltage
-0.25
-0.5
- 0.6
- 0.9
-1.2
hFE*
DC Current Gain
VCE
VCE
VCE
VCE
=- 1 V
=-1 V
=-1 V
=- 1 V
40
45
50
15
60
VCE = - 1 V
Vce = - 1 V
VCE = - 1 V
VCE = - 1 V
VCE =- 1 V
VCE — 1 V
VCE =- 1 V
VCE =-10 V
VCE =-20 V
80
90
100
15
40
50
100
600
hfa
fr
Small Signal Current Gain
(for BCY71 only)
Transition Frequency
400
lc--10mA
f = 100 MHz
For BCY71
VCE =- 2 0 V
15
250
200
-
MHz
MHz
MHz
8
6
CEBO
CCBO
*
Emitter-base Capacitance
Collector-base Capacitance
For BCY70
For BCY70 and BCY72
lc=0
V
EB
= - 1 V
f - 1 MHz
I
E
=0
V
C
B=-10V
f » 1 MHz
PF
PF
Pulsed : pulse duration n 300 us, duty cycle = 1 %.
ELECTRICAL CHARACTERISTICS
(continued)
Symbol
NF
Parameter
Noise Figure
Teat Conditions
l
c
=-0.1 mA
VCE = - 5 V
R
g
= 2 k O
f = 10 to 10 000 Hz
For BCY70 and BCY72
for BCY71
lc =-1 mA
f = 1 kHz
l
c
= - 1 mA
f = 1kHz
l
c
» - 1 mA
f = 1 kHz
l
c
=-10mA
IBI = - 1 mA
l
c
=-10mA
I
B1
= - 1 mA
VCE =-10 V
Win.
Typ.
Max.
Unit
6
2
2
12
20x10-"
dB
dB
kn
hi.
h,
e
Input Impedance
(for BCY71 only)
Reverse Voltage Ratio
(for BCY71 only)
Output Admittance
(for BCY71 only)
Delay Time
(for BCY70 and BCY72 only)
Rise Time
(for BCY70 and BCY72 only)
Storage Time
(for BCY70 and BCY72 only)
Fall Time
(for BCY70 and BCY72 only)
Turn-on Time
(for BCY70 and BCY72 only)
Turn-off Time
(for BCY70 and BCY72 only)
VCE =-10 V
VCE =-10 V
10
V
EE
=3V
23
V
E
E=3V
25
270
50
48
320
35
35
60
h
oa
td
tr
us
ns
ns
ns
350
u
tf
ton
tod
lc=-10mA
V
E
E=3V
|
B1
=— |
B2
=— 1 mA
l
c
=-10mA
V
E
E=3V
|
B1
=- |
B2
=-1 mA
l
c
=-10mA
IBI = - 1 mA
V
ee
=3V
ns
80
ns
65
l
c
=-10mA
V
E
g=3V
IBI =- lea =-1 rnA
ns
420
*
Pulsed : pulse duration = 300 us. duty cycle « 1 %.
TEST CIRCUIT
Test Circuit for Switching Times.
3.0V
-20V
-20V
V
BB
=7.0V
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