*., fi
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
•
•
•
•
Designed for Complementary Use with the
BD546 Series
85 W at 25°C Case Temperature
B C.
SOT-93 PACKAGE
(TO P VIEW)
1
X
15 A Continuous Collector Current
Customer-Specified Selections Available
C X'
•o
3
O
>*
VALUE
40
60
80
100
40
60
80
100
5
15
85
3.5
t t
^
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD54S
Collector-base voltage (I
E
= 0)
BD545A
BD545B
BD545C
BD545
BD545A
BD545B
BD545C
VCBO
SYMBOL
UNIT
V
Collector-emitter voltage (I
B
= 0) (see Note 1)
VCEO
V
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
VEBO
V
A
W
W
°C
°C
"C
°C
Ic
Ptot
Plot
TA
T
J
-65 to +150
-65 to +150
-65 to +150
260
Tstg
T
L
NJ Seini<Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information ftirnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
voltage
TEST CONDITIONS
BD545
(BR)CEO
breakdown
MIN
TYP
MAX
UNIT
f»-
'""**«
V
C E
= 40V
V
CE
= 60V
V
CE
= 80V
V
C E
=100V
V
C E
= 30V
V
C E
= 60V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
SV
4V
4V
4V
-•
V
BE
= 0
V
BE
= 0
VBE = °
V
BE
= 0
I
8
= 0
I
B
= 0
l
c
= 0
l
c
= 1A
l
c
= 5 A
l
c
= 10A
l
c
= 5 A
I
C
=10A
l
c
= 10 A
I
C
= 0.5A
I
C
= 0.5A
SS
BD54SC
BD545
BD545A
BD545B
BD545C
BD545/545A
BD545B/545C
40
60
80
100
0.4
0.4
0.4
0.4
0.7
0.7
1
60
25
10
0.8
1
1.8
20
3
V
ces
Collector-emitter
cut-off current
Collector cut-off
mA
'
CEO
'EBO
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
mA
mA
hpF
(see Notes 4 and 5)
,
k
,
4
„
JC
,
(see Notes 4 and 5)
(see Notes 4 and 5)
f=1kHz
f=1MHz
CE(S3t)
BE
16
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
I
B
= 625mA
•B =
2A
V
CE
=
4V
V
V
V
CE
= 10V
V
C E
= 10V
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 us, duty cycle • 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
e
jo
R
OJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.47
35.7
UNIT
'CAW
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
0(f
Turn-on time
Turn-off time
I
C
= 6 A
V
BE(oft)
= -4V
TEST CONDITIONS *
l
B(on)
= 0.6A
R
L
= 50
l
B
(
0f
f) = -0.6A
t
p
= 20 us, dc •_ 2%
MIN
TYP
0.6
1
MAX
UNIT
MS
us
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
Test/Measurement
京公网安备 11010802033920号
EEWORLD
