ioduati, fine.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NPN BD683
PNP BD684
SILICON DARLINGTON POWER
TRANSISTORS
The BD683 is NPN eptaxial-base transistors in monolithic Darlington circuit for audio
and video applications.
They are mounted in Jedec TO-126 plastic package.
PNP complement is BD684.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
i
"c
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Ratings
Value
120
140
5
Ir
4
6
0.1
Unit
V
V
V
IB
PT
Tj
Tsto
Base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
'CM
IBM
@ T
mb
= 25°C
40
150
-65 to +150
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
RthJ-a
Ratings
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
Value
3.12
100
Unit
K/W
K/W
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
NPN BD683
PNP BD684
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO
ICEO
IEBO
VcE(SAT)
Ratings
Collector cut-off current
Collector cut-off current
Emitter cut-offcurrent
Collector-Emitter saturation
Voltage
DC Current Gain
Test Condition(s)
I
E
=0, VcB=V
C
EOMAX=120V
I
E
=0 , V
CB
= 1/2V
C
BOMAX= 70V,T,= 15CTC
l
8
=0,VcE=1/2V
C
EOMAX=60V
lc=0, V
EB
=5 V
lc=1.5A, !
B
=6mA
VcE=3 V, lc=500 mA
V
C
E=3 V, l
c
=1 ,5 A
V
C
E=3 V, l
c
=4 A
V
CE
=3V, I
C
=1,5A
Min Typ
-
-
-
-
-
-
750
-
-
10
-
Max
0,2
1
0,2
5
2,5
-
-
-
2,5
-
-
Unit
mA
mA
mA
V
-
-
-
-
-
2200
-
HFE
V
BE
h,
e
1500
-
-
60
-
0,8
4,5
Base-Emitter Voltage(1&2)
V
C
E=3V, lc=1,5A, f=1 MHz
Small signal current gain
Ut-off frequency
V
C
E=3V, I
C
=1,5A
fhfe
I
F
=1,5A
Diode forward voltage
V
F
Second-breakdown collector
VcE=50 V, tp= 20ms,non rep., without
'(SB)
heatsink
current
Turn-on time
ton
I — 1 ^A L
—
L
*—
fimA V,^.— ^OV
Turn-off time
toff
1. Measured under pulse conditions :t
P
<300us, 8 <2%.
2.
VBE decreases by about 3,6 mV/K with increasing temperature.
V
kHz
A
MS
0,8
-
-
-
2
8
MECHANICAL DATA CASE TO-126
DIMENSIONS
mm
inches
min
A
B
C
D
E
F
G
H
L
M
N
P
7.4
10.5
2.4
0.7
max
7.8
10.8
2.7
0.9
min
max
2.2 typ.
0.49
0.75
4.4 typ.
2.54 typ.
15.7 typ.
1.2 typ.
3.8 typ.
3.0
3.2
0.295
0.307
0.413
0.425
0.094
0.106
0.027
0.035
0.087 typ.
0.019
0.029
0.1 73 typ.
0.1 00 typ.
0.61 8 typ.
0.047 typ.
0.1 49 typ.
0.118
0.126
Emitter
Collector
Base
Pin 1 :
Pin 2:
Pin 3:
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