20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BD705/706/707/708
BD709/710/711/712
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
DESCRIPTION
The BD705, BD707, BD709 and BD711 are silicon
epitaxial-base NPN power transistors in Jedec TO-
220 plastic package intended for use In power linear
and switching applications. The complementary
PNP types are the BD706, BD708, BD710 and
BD712 respectively.
TO-220
INTERNAL SCHEMATIC DIAGRAMS
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
VCBO
VCES
VCEO
Veao
Ic
IB
Plot
Tstg
Parameter
Collector-emitter Voltage (le =0)
Collector-emllter Voltage (Vse = 0)
Collector-emitter Voltage (Is - 0)
Emitter-base Voltage (Ic =0)
Collector Current
Base Current
Total Power Dissipation at T
case
£ 25 °C
Storage Temperature
Junction Temperature
NPN
PNP*
BD705
BD706
45
45
45
BD707
BD708
BD709
BD710
BD711
BD712
Unit
60
60
60
5
12
5
75
80
80
80
100
100
100
V
V
V
V
A
A
W
C
C
-65 to 150
Tj
150
°C
* For PNP types voltage and current values are negative.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information ftimished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS
(T
ca3a
- 25 <C unless otherwise specified)
Symbol
ICBO
Parameter
Collector Cutoff Current
(lE-0)
'
Test Conditions
forBD705/706
V
C
B<=45V
forBD707/708
V
CB
-60V
for B D709/71 0
VOB «= 80 V
forBD711/712
V
C B
-100V
forBD705/706
forBD707/708
forBD709;710
forBD711/712
forBD705/706
forBD707/708
forBD709/710
forBD711/712
V
C
B=45V
V
C
B=-60V
V
CB
=80V
VcB=-100V
V
0
e=22V
V
CE
-30V
V
CE
=40V
VCE - 5 0 V
Min.
Typ.
Max.
100
100
100
100
Unit
uA
UA
(jA
HA
mA
mA
mA
1
1
1
1
1
1
1
1
ICEO
Collector Cutoff Current
(Is =0)
mA
mA
mA
mA
mA
mA
V
V
V
V
IEBO
VoEO(sus)*
Emitter Cutoff Current
(Ic - 0) .
Collector-emitter Sustaining
Voltage (I
B
=0)
VEB =5 V
Ic = 100 mA
for BD705/706
for BD707/708
forBD709/710
forBD711/712
IB -0.4 A
IB-**
VCE = 4 V
V
C
E=2V
V
C
E=2V
for BD70S/706
for BD707/708
forBD709/710
VCE - 4 V
forBD705/706
forBD707/708
forBD709/710
forBD711/712
VCE =4 V
for BD705/706
for BD707/708
forBD709/710
forBD711/712
VCE = 3 V
45
60
80
100
1
VcE(Bal)*
VCGK*
VBE*
hpE*
Collector-emitter Saturation
Voltage
Knee Voltage
I
C
=4A
I
C
=3A
|
c
= 4 A
I
C
=0.5A
I
C
»2A
1
0.4
1.5
40
30
30
30
20
15
15
15
5
5
30
150
150
150
150
120
400
V
V
Base-emitter. Voltage
DC Current Gain
V
Ic - 4 A
lo = 10 A
10
10
8
8
Transition Frequency
Ic = 300 mA
' Pulsed : pulse duration =< 300 MS, duty cycle = 1,5 %.
f
T
" Value for which lo = 3,3A at'Vce =
2V.
For PNP types voltage and current values are negative.
3
MHz
RF/Wirelessly
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