, U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
•
Designed for Complementary Use with
BDW63, BDW63A, BDW63B, BOW63C and
BDW63D
60 W at 25°C Case Temperature
6 A Continuous Collector Current
Minimum h
FE
of 750 at 3V, 2 A
TO-220 P/kCKAGE
(TOPV IEW)
•
•
•
Hc
<;. f
t
<
:
:
1
2
3
o
VALUE
-45
-60
-80
-100
-120
-45
-60
-80
-100
-120
-5
-6
-0.1
60
2
50
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
SYMBOL
UNIT
Collector-base voltage (I
E
= 0)
VCBO
V
Collector-emitter voltage (I
B
= 0) (see Note 1)
VCEO
V
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25"C case temperature (see Note 2)
Continuous device dissipation at (or below) 25'C free air temperature (see Note 3)
Undamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
VEBO
'c
IB
Ptot
Ptot
%LI
C2
T
J
T
stg
V
A
A
W
W
mJ
-65to+150
-65 to +150
-65 to +150
•c
°C
•C
TA
MOTES: 1 . These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
3. Derate linearly to 1 50°C free air temperature at the rate of 1 6 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20mH, lB(on)
=
'
5 mA
'
R
BE
=
100 Q,
V
BE
(off) = 0, R
s
= 0.1 0, V
C
c = -20 V.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
BDW64
BDW64A
l
c
= -30mA
I
B
= 0
(see Note 5)
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
MIN
-45
-60
-80
-100
-120
-0.5
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-0.2
-5
-5
-5
-5
-5
-2
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
750
100
20000
mA
mA
V
TYP
MAX
UNIT
Collector-emitter
(BR)CEO breakdown voltage
V
C E
= -30V
Collector-emitter
CEO
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
l
c
= 0
IQ = -2 A
I
C
= -6A
I
C
= -2A
'
c
~'
2
I
C
= -6A
I
R
= 0
cut-off current
V
CE
=
V
CE
=
V
CE
=
V
CE
=
V
CB
=
V
CB
=
V
CB
=
-30V
-40V
-50V
-60V
-45V
-60V
-80V
'
ceo
Collector cut-off
current
V
CB
= -100V
V
CB
= -120V
V
CB
= -45V
V
CB
= -60 V
V
CB
= -80V
V
CB
= -100V
V
CB
= -120V
T
C
= 150°C
T
c
= 1 50°C
T
C
*150°C
T
C
= 150°C
T
C
= 150°C
mA
'
EBO
FE
VBE
<°">
CE(sat)
EC
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
V
EB
=
V
CE
=
V
CE
=
V
CE
=
IB-
|
B
_
I
F
=
-5V
-3V
-3V
-3V
-
12m
A
-60mA
_6 A
-2.5
-2.5
-4
-35
V
V
V
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 MS, duty cycle ; 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
ejc
R
OJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.08
62.5
UNIT
°C/W
°c/w
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
oB
Turn-on time
Turn-off time
I
C
= -3A
VBE(off) = 4.5 V
TEST CONDITIONS t
l
B(on)
= -12mA
R
L
= 10Q
l
B(off)
= 12mA
t
p
= 20^,dc<2%
MIN
TYP
1
5
MAX
UNIT
MS
MS
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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