i, L/
nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX:
(973) 376-8960
NPN BDX35 - BDX36 - BDX37
SILICON PLANAR EPITAXIAL POWER
TRANSISTORS
The BDX35, BDX36 and BDX37 are NPN transistors mounted in Jedec TO-126 plastic package.
They are intented for use in high current switching applications and switching regulator circuits
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
Collector-Emitter Voltage
Ratings
BDX35
BDX36
BDX37
BDX35
BDX36
BDX37
BDX35
P^?y
BDX37
;BDX35
; BDX36
BDX37
BDX36
Value
60
60
80
100
120
120
100
120
120
5
Unit
V
VCBO
Collector-Base Voltage
Collector-Emitter
(V
BE
=0)
Emitter-Base Voltage
Voltage
V
VCES
V
VEBO
V
Symbol
Ratings
ilqRMS)
Pnlla^tnr r*i irront
Value
BDX35
i..|pX36
BUAOf
Unit
5
'c
!
i oDXoO
ICM
IB
i
IB
Racs
base
rurrent
current
BDX36
BDX37
BDX35
BpX36
BDX37
10
1
BDX35
IBM
PT
Power Dissipation
@ T
mb
= 75°
BDX36
BDX37
BDX35
; BDX36
BDX37
BDX35
BDX36
BDX37
BDX35
: BDX36
BDX37
2
15
Watts
W/°C
Tj
Junction Temperature
150
°C
Tstg
Storage Temperature
-65 to +150
°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
NPN BDX35 - BDX36 - BDX37
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
Ratings
Thermal Resistance, Junction to mouting
base
i BDX35
Dr
.
v
,
c
BDX36
Value
5
Unit
K/W
RthJ-a
BDX37
BDX35
Thermal Resistance, Junction to ambient „_..,_»
infree air
i
BDX36
i BDX37
100
K/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
E
=0 , V
CB
=80 V
I
E
=0 , V
C
B=100 V
BDX35
BDX36
Min Typ MX
-
-
-
-
-
-
-
-
-
-
10
10
10
50
50
50
10
Unit
i
ICBO
Collator rut off current
Collector cut-off current
'--— - -
V
^
=QQ
y
V ^
=
^^
----^
'
E=0
'
V
CB=100
BDX37
1
11A
UA
!E=O , V
C
B=100 V,Tj = 100°C BDX36
I
E
=0 , V
CB
=100 V,T| = 100°C BDX37
BDX35
lc=0, V
EB
=4 V
BDX36
-
BDX37
i
IEBO
Cmittor i^nt nff^nrront
!
DDX35
lc=0,V
EB
=5V
BDX36
BDX37
BDX35
; Rr)X36
BDX37
BDX35
>
60X36
BDX37
:
BDX36
BDX35
BDX36
..^. —
onv^k
- JOXM
:BDX36
BDX35
BDX36
.__'.
„
i DlJAOO
To
To
1
1
1
0,9
0,7
0,9
1,2
1,2
1,5
1,6
2,0
2,0
2,5
450
-
uA
mA
' l
c
=5.0 A, I
B
=500 mA
VcE(SAT)
-
-
Collector-Emitter saturation
Voltage (*)
lc=7.0 A, I
B
=700 mA
:ic=10A, I
B
=1A
„
t
.
Base-Emitter saturation
Wnltane
( )
vonage
l*\*^/
lc=5.0 A, I
B
=500 mA
,c=7.0A,,
B
=700mA
lc=10A, I
B
=1A
V
-
-
-
-
-
45
-
-
-
-
-
-
130
VBE(SAT)
V
h
FE
Fir* Purront l^ain
f*\— 1 H \
\*—
^nOm A
;
BDX36
BDX37
-
80
ST - Low Power RF
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