, U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (973) 376-2922
(212)227-6005
U.S.A.
Silicon NPN Power Transistor
BDY47
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V
(BR)C
Eo= 350V(Min.)
• DC Current Gain-
: h
FE
=20(Min.)@l
c
= 2A
• Collector-Emitter Saturation Voltage-
: V
CE(sat
)= 1.5V(Max)@ l
c
= 15A
High Switching Speed
APPLICATIONS
• Voltage regulator
• Inverter
• Switching mode power supply
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCBO
VCES
VCEO
VEBO
•)
3
I
PIN
1.BASE
K
^S
2. BJTTER
3. COLLECT OR (CASE)
TO-3 package
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation@Tc
s
S45°C
Junction Temperature
Storage Temperature
VALUE
750
750
350
7
15
17
5
95
175
UNIT
V
V
2
1
V
V
V-.
lc
ICM
IB
PC
Tj
Tstg
1
i
(-
1
_4U-DJ
f
A
A
f
A
W
r
130
-
X
XD^4
/
^Trti— ^
?
c
-
-
'
r
t
1
f
"Ys^ ^/
M^)
DM
A
6
C
D
E
6
H
K
L_L
N
mm
UH
MAX
3900
25.30 26.6?
7.80
8.30
090
1.10
1.40
tfiO
10.32
546
It 40 13.50
1675
iros
19.40
1952
4oo
450
3000
3020
4.30
450
•c
'C
-65-175
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance.Junction to Case
MAX
UNIT
"CM/
q
1.37
U
L V
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25°C
unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
CONDITIONS
MIN
BDY47
MAX
UNIT
V(BR)CEO
lc= 200mA; I
B
= 0
350
V
V(BR)CBO
Collector-Base Breakdown Voltage
lc=1mA;l
E
=0
750
V
V(BR)EBO
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
I
E
= 2mA; l
c
= 0
7
V
VcE(sat)
lc= 15A; I
B
= 5A
lc= 15A; I
B
= 5A
VCB= 750V; I
E
= 0
V
CB
= 750V; I
E
= 0, T
C
=150'C
lc= 2A; V
CE
= 2V
lc=10A;V
CE
=2V
lc=0.5A; V
C
E=10V
20
1.5
V
VeE(sat)
Base-Emitter Saturation Voltage
Collector Cutoff Current
2.0
V
ICBO
0.2
2.5
mA
hpE-1
DC Current Gain
hpE-2
DC Current Gain
5
fl
Current Gain-Bandwidth Product
10
MHz
Switching times
Turn-on Time
ton
0.5
IJ S
tf
Fall Time
Turn-off Time
lc=5A;l
B
i=-lB2=1A
1.0
ns
us
toff
3.5
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