<zEs.mL-don.au.ctot Lpioaucti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
BDY54
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: V
C
EO(susr 120V(Min.)
• Collector-Emitter Saturation Voltage-
:V
CE
(«t)=1.1V(Max)@lc = 4A
• High Switching Speed
-.«
£
3
PIN
APPLICATIONS
• Designed for general-purpose switching and amplifier
applications
l.BASE
2.
EMITTER
3. COLLECT OR (CASE)
TO-3 package
ABSOLUTE MAXIMUM RATINGS(T
a
=25"C)
SYMBOL
VCBO
VCEO
VEBO
Ic
i
VALUE
180
^
r
m
-A
-»
t
-N—|
-l
L
C
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Em itter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation@Tc=25°C
Junction Temperature
Storage Temperature
UNIT
V
IE
1
-H^U-D 1PL
LK
!
120
V
rH /"
•sa
"A
xrAN./ '
t t
^~
H
aM
9
c
i
; B
t
— If —*|
7
V
V
z^s
•BH
DIM
A
B
^ 1
iran
MM f MAX
12
A
IB
5
c
3900
25-30 286?
7.30
8.30
090
1 10
1 40
T.60
1092
5.46
11.40 1350
1675
iros
1962
19.40
400
420
A
D
£
Q
60
W
H
K
PC
Tj
200
'C
L
H
Tstg
-65-200
•c
g
u
V
90X10
430
3020
450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25°C
unless otherwise specified
SYMBOL
VcEO(SUS)
BDY54
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain-Bandwidth Product
CONDITIONS
l
c
=100mA;l
B
=0
|
c
= 4A; I
B
= 0.4A
MIN
TYP.
MAX
UNIT
V
120
VcE(sat)-1
1.1
V
VcE(sat)-2
I
C
=7A;I
B
= 1.4A
lc= 4A; I
B
= 0.4A
2.2
V
VsE(sat)-i
2.0
V
VeE(sat)-2
I
0
=7A;I
B
=1.4A
V
CE
= 150V;VB6=-1.5V,T
C
=150°C
V
EB
= TV; l
c
= 0
lc=2A;V
C
E=1.5V
I
C
=0.5A; V
C
E=4V;f=10MHz
20
2.5
V
ICEX
15
mA
IEBO
3.0
mA
PIFE
fr
20
MHz
Switching Times
ton
Turn-On Time
Turn-Off Time
lc= 5A;
\=
1A
0.3
us
us
toff
I
C
=5A;I
B
1= 1A; le2=-0.5A
1.8
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