na.
,U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
BDY55
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-
: h
FE
=20-70@l
c
= 4A
• Collector-Emitter Saturation Voltage-
:V
CE(sa
,)=1.1 V(Max)@l
c
= 4A
H
/
APPLICATIONS
• Designed for general-purpose switching and amplifier
applications
2
3
PIN
1.BASE
2. BJTTER
3. COLLECT OR (CASE)
TO-3 package
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
VCBO
VCEO
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation@Tc-25 C
Junction Temperature
Storage Temperature
VALUE
100
60
7
15
7
117
200
UNIT
,
A
|*-N -»|
1
1
V
t-E
V
V
A
A
W
°C
'C
-JU-Dm
K— U —-t
!
-1
C
C-K
!
VEBO
Ic
IB
PC
Tj
M
fcrJ
DM
/"^L \/ .
—
$
c
ea
i t
i
B
' I
v^2_-
X
Mn
3
i
iran
ft
IM
MAX
3900
25
30 2667
^
.80 8.30
1 10
0
90
1\60
t
.40
10.92
S46
1t
40 1350
UOS
16
75
1962
1<
40
00
420
<
1X10 3030
3C
«k30
4,50
e
c
D
Tstg
-65-200
£
0
H
K
L
H
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance.Junction to Case
MAX
1.5
UNIT
9
U
V
•c/w
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25°C
unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current Gain-Bandwidth Product
CONDITIONS
lc=200mA; I
B
= 0
l
c
= 4A; l
s
= 0.4A
I
C
=10A;I
B
=3.3A
lc= 4A; V
CE
= 4V
V
CE
= 30V; I
B
= 0
VcE=100V;V
BE
=-1.5V
V
ce
= 100V; V
BE
=-1.5V, T
C
=150"C
VEB= TV; l
c
= 0
lc= 4A; V
c
e= 4V
lc=10A;V
C
E=4V
lc=1A;V
C
E=4V;f=10MHz
20
10
10
MIN
60
BDY55
MAX
UNIT
V
VcEO(SUS)
VcE(sat)-i
1.1
2.5
1.8
0.7
5.0
30
5.0
70
V
V
V
mA
mA
mA
VcE(sat)-2
VBE(OH)
I CEO
ICEX
IEBO
hpE-1
hFE-2
f
T
MHz
Switching Times
Turn-On Time
Turn-Off Time
lc= 5A; I
B
= 1A
lc= 5A; I
B
1= 1A; lB2=-0.5A
0.5
2.0
us
us
ton
toff
MCU
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