, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
BDY56
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-
: h
FE
=20-70@l
c
= 4A
• Collector-Emitter Saturation Voltage-
: V
CE
<sat)= 1.1 V(Max)@ l
c
= 4A
<"| ^_
I «n
APPLICATIONS
• Designed for general-purpose switching and amplifier
applications
3
PIN
1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCBO
VCEO
VEBO
Ic
IB
PC
Tj
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation@Tc-25 C
Junction Temperature
Storage Temperature
VALUE
150
120
7
15
7
117
200
-65-200
UNIT
t
V
— ._
i
]
\f
*
i
>PL
I
C
IE
V
V
A
A
W
!
1' 1
$A
\^j ^/'
430
DM
A
B
C
D
E
G
H
K
L
H
J3
r
139
s \
t
c
t
£-JL_.$
i B
Xt/tN^X
iniu
WIN
MAX
39' 0
2S3C 26.67
7.80
8.30
090
(.10
MO
1.60
1092
546
1t40 1350
1675
iros
1940 1962
4 JO
400
XJX10
3030
430
4,50
•c
°c
Tstg
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance.Junction to Case
MAX
UNIT
U
1.5
°c/w
V
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
Tc=25'C
unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current Gain-Bandwidth Product
CONDITIONS
lc=200mA; I
B
= 0
|
c
= 4A; I
B
= 0.4A
I
C
=10A;I
B
=3.3A
lc= 4A; V
CE
= 4V
V
CE
= 60V; I
B
= 0
V
CE
=150V;V
BE
=-1.5V
V
CE
= 150V; V
BE
=-1.5V, T
C
=150"C
V
EB
= TV; l
c
= 0
lc= 4A; V
CE
= 4V
lc=10A;V
CE
=4V
lc=1A;V
CE
=4V;f=10MHz
20
10
10
MIN
120
BDY56
MAX
UNIT
V
VcEO(SUS)
VcE(sat)-i
1.1
2.5
1.8
0.5
3.0
30
3.0
70
V
V
V
mA
mA
mA
VcE(sat)-2
VeE(on)
ICEO
Icex
IEBO
hpE-1
hFE-2
fl
MHz
Switching Times
Turn-On Time
Turn-Off Time
lc= 5A; ls= 1A
I
C
=5A;I
B
1= 1A; ls2=-0.5A
0.5
2.0
us
ton
toff
M S
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