,U
nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
BDY58
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
:V
CE
o(sus)=125V(Min)
• High Power Dissipation
• Low Collector Saturation Voltage
APPLICATIONS
• LF signal power amplification.
• High current fast switching
1
£
^S
2
3
I
PIN
1.BASE
2.
EMITTER
3. COLLECT OR (CASE)
TO-3 package
ABSOLUTE MAXIMUM RATINGS(T
a
=25"C)
SYMBOL
VCBO
VCEO
VEBO
Ic
IB
PC
Tj
Tstg
PARAMETER
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
VALUE
160
125
10
25
6
175
UNIT
V
V
V
t
n^N^n *
J
1
C
IE
\J /
I
-*4U-D2PL
I
^
K
i f
G
t
A
A
W
°C
JH&7$---$
t
\**,J ^S^
B
\a
Mini
DM
MN
MAX
Junction Temperature
Storage Temperature Range
200
A
B
C
D
E
4_
H
K
39£O
25.30 26.67
7.90
8.30
090
110
1.40 1.60
1092
S4S
It 40 1350
-65-200
°c
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
L
MAX
1.0
1675 ir0S
1940 1962
400
420
PARAMETER
Thermal Resistance, Junction to Case
UNIT
°C/W
H
0
U
V
virv)
430
3020
450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25'C
unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector- Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain— Bandwidth Product
CONDITIONS
l
c
= 100mA; I
B
= 0
MIN
BDY58
TYP.
MAX
UNIT
VcEO(SUS)
125
V
V(BR)CBO
l
c
= 5mA ; I
E
= 0
160
V
V
V(BR)EBO
!E= 5mA ; lc= 0
10
VcE(sat)
lc= 10A; I
B
= 1A
1.4
V
ICBO
V
GB
= 120V;I
E
=0
V
CE
= 80V; R
BE
= 1 0 Q
VOE= 80V; RBE= 10 Q ; T
C
=100°C
VEB= 10V;I
C
=0
lc=10A;V
C E
=4V
lc= 20A ; VCE= 4V
lc=1A; V
CE
=1 5V; f= 10MHz
0.5
mA
ICER
0.5
10
0.5
mA
IEBO
mA
hpE-1
20
80
hFE-2
15
fr
10
MHz
Switching Times
Turn-On Time
Turn-Off Time
lc=15A, I
B
=1.5A,
I
C
=15A,I
B
1=-IB2=1.5A,
ton
1.0
P S
toff
2.0
11 S
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