/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Lrnc,
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
BDY71
DESCRIPTION
• Continuous Collector Current-l
c
= 4A
• Collector Power Dissipation-
: P
c
= 29W @T
C
= 25 °C
APPLICATIONS
• Designed for general purpose switching and amplifier
applications.
PIN 1.BASE
1. B/I1TTER
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCBO
VCEX
VCER
VCEO
VEBO
Ic
IB
PC
Tj
3. COLLECTOR (CASE)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage V
S
e= -1 .5V
Collector-Emitter Voltage RBE= 100Q
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@Tc=25°C
Junction Temperature
Storage Temperature
VALUE
90
90
60
55
7
4
2
29
200
UNIT
V
TO-66 package
-A
V
V
V
V
A
A
W
-N-1
'
'
t-
•c
°c
DIM
A
B
nun
INI
MAX
3.1!. 40
31^0
1730
jjt7,70_
6.70
7.10
0,70
L
0.90
1.40
t 1.60
5.08
c
D
Tstg
-65-200
E
0
H
K
L
N
Q
U
V
2i4
9.30
14.70
12^«0
1.60
24JO
Jjid
THERMAL CHARACTERISTICS
SYMBOL
Rthj-c
PARAMETER
Thermal Resistance.Junction to Case
MAX
6.0
UNIT
•c/w
10,20
14.90
12.60
3^0
24,50
3.70
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25°C unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
CONDITIONS
lc= 100mA; I
B
= 0
MIN
BDY71
MAX
UNIT
V
VcEO(SUS)
55
VcER(SUS)
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain-Bandwidth Product
lc=100mA;R
B
E=100a
|
E
=1mA;|
c
=0
60
V
V(BR)EBO
7
V
VcE(sat)
lc= 0.5A; I
B
= 50mA
lc= 0.5A; Vce= 4V
V
CE
= 30V; I
B
= 0
VCE= 90V; V
B
E(off)= 1.5V
V
CE
= 30V; V
BE(oH
,= 1.5V,T
C
=150°C
V
EB
= 7V; l
c
= 0
lc= 0.5A ; V
CE
= 4V
lc=0.2A;V
CE
=10V
80
1.0
V
VeE(on)
1.7
V
ICEO
0.5
1.0
5.0
1.0
mA
ICEV
mA
IEBO
mA
hFE
200
fr
0.8
MHz
Embedded System
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