inc..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
BDY72
DESCRIPTION
• Contunuous Collector Current-l
c
= 3A
• Collector Power Dissipation-
: P
c
= 25W @T
C
= 25°C
Collector-Emitter Sustaining Voltage-
: V
CE
o(sus)= 120V(Min)
APPLICATIONS
• Designed for use in general purpose switching and linear
amplifier applications requiring high breakdown voltages.
3
PIN 1.BASE
2. BETTER
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCBO
VCEO
VCEX
VCER
VEBO
Ic
IB
PC
Tj
Tstg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage V
BE
= -1.5V
Collector-Emitter Voltage RBE= 100Q
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@Tc=25'C
Junction Temperature
Storage Temperature
VALUE
150
120
150
130
7
3
2
25
200
-65-200
UNIT
V
3. COLLECT OR (CASE;
TO-66 package
^
V
V
V
j^t
j_
L
-
r
-N-1
-"
|
1
t
C
j
«iU-Ds
- U —*i
LK
V
A
f
A
W
\
DIM
rj-H
/ r
GH
\
L t
1
!J G B
^
-
1^
1
*
sa
f
I1WI1
•c
'C
A
8
D
E
G
H
L
N
Q
V
c
UN
31L40
17 JO
MAX
31^0
17.70
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
K
7.10
6.70
0.70
0.90
1.40
t.60
5,03
2.S4
10JO
9.SO
PARAMETER
Thermal Resistance.Junction to Case
MAX
7.0
UNIT
14.70
12.40
1.60
u
•c/w
24 JO
JiO
14.90
12.60
3JSO
24^0
3.70
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25°C unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain-Bandwidth Product
CONDITIONS
lc=100mA; I
B
=0
lc= 100mA; R
BE
= 100O
lc=100mA; V
B
e=-1.5V
lc= 0.5A; I
B
= 50mA
lc= 0.5A; V
CE
= 4V
V
CE
= 140V; I
B
= 0
V
ce
=1 30V; VBE
(0
ffr 1.5V
V
CE
= 130V; V
BE
(off)= 1-5V T
C
=150"C
VES= TV; l
c
= 0
lc= 0.5A; VCE= 4V
lc=0.2A; Vce=10V
60
MIN
BDY72
MAX
UNIT
V
VcEO(SUS)
120
VcER(SUS)
130
V
V
VcEX(SUS)
150
VcE(sat)
6.0
V
V
VeE(on)
1.7
ICEO
10
mA
ICEX
1.0
5.0
1.0
mA
mA
IEBO
hFE
180
MHz
fl
0.8
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