LS
J.
E11EU
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
BDY73
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-h
F
E=50-150@l
c
= 4A
• Collector-Emitter Saturation Voltage-
: V
CE
(sa.)= 11 V(Max)@ l
c
= 4A
APPLICATIONS
• Designed for general-purpose switching and amplifier
applications
2
PIN
1.BASE
2.
EMITTER
3.CQLLECTOR(CASE)
TO-3 package
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCBO
VOER
VCEO
VEBO
lc
IB
PC
Tj
Tstg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation@T
G
=25°C
Junction Temperature
Storage Temperature
VALUE
100
70
60
7
15
7
117
200
UNIT
V
V
V
i
1
*~~r-—^
-*IU-D;
tPL
I
1
T
C
LK
V
A
A
W
'C
A
f
\^—
DIM
A
B
^\'-^r
r
130
/ \
t
c
t
^1
(t
; B
\n
I
<
MM
MAX
39X»
2530
26
&T
C
D
E
<i
H
J|^
r
L
N
0
r.ao
8.30
-65-200
r
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1 .5
UNIT
"C/W
U
V
090
1.10
1.40
1.60
1092
546
11.40
1350
16.75
iros
1940
1952
420
40
°
3000
430
3020
4 SO
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDY73
MIN
MAX
UNIT
VcEO(SUS)
Collector-Emitter Sustaining Voltage
lc= 200mA; 1
B
= 0
60
V
VcER(SUS)
Collector-Emitter Sustaining Voltage
lc= 200mA; R
BE
=100fi
70
V
VcEX(SUS)
Collector-Emitter Sustaining Voltage
lc=100mA;V
BE
=-1.5V
90
V
VcE(sat)
Collector-Emitter Saturation Voltage
lc= 4A; I
B
= 0.4A
1.1
V
VsE(on)
Base-Emitter On Voltage
lc= 4A; V
CE
= 4V
1.8
V
ICEO
Collector Cutoff Current
V
CE
= 30V; I
B
=0
VcE=100V;V
B
E
(t
,ff)=1.5V
VCE= 100V; V
B
6
(
cff)= 1.5V,T
C
=150°C
V
EB
= 7.0V; l
c
=0
0.7
1.0
5.0
5.0
mA
ICEX
Collector Cutoff Current
mA
IEBO
Emitter Cutoff Current
mA
hpE
DC Current Gain
Second Breakdown Collector
Current with Base Forward Biased
Current Gain-Bandwidth Product
lc= 4A; V
CE
= 4V
50
150
Is/b
V
C
E= 60V, t= 1.0s, Nonrepetitive
1.95
A
fr
lc=1A;V
CE
=4V
0.8
MHz
Talking
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