, U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
BDY78
DESCRIPTION
• Continuous Collector Current-l
c
= 4A
• Collector Power Dissipation-
: P
c
= 25W @T
C
= 25°C
APPLICATIONS
• Designed for general purpose switching and amplifier
applications.
3
PIN 1 BASE
2. EMITTER
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
Vceo
VCEX
VCEO
VEBO
Ic
IB
PC
Tj
Tstg
3. COLLECTOR (CASE)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage V
BE
= -1 .5V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@Tc=25°C
Junction Temperature
Storage Temperature
VALUE
90
90
55
7
4
2
25
200
UNIT
V
•^
•
•
TO-66 package
V
V
V
A
A
W
, [
U
r
c
•—
*IU~D ,
(PL
1
.1
-J
1
C
1
L
i
- u —*
I-L-*
r
i3H
^^\—^
\
c
t
/
B
k-
t
^_ _^S
X-
1
I
SB
imn
MAX
31.40 J1.80
17^50
17.70
6.70
7.10
0.90
0.70
140
1.60
5.03
2.54
10JO
9.80
14.90
14.70
12.40
12.60
5,60
3.30
24JO
24.50
150
SJO
•c
•c
DIM
A
B
urn
c
-65-200
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance.Junction to Case
MAX
7.0
UNIT
'CM/
H
It
L
H
Q
U
V
s
D
E
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information Furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25°C unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current Gain-Bandwidth Product
CONDITIONS
l
G
=100mA;l
B
=0
lc=1mA;l
E
=0
lc= 0.5A; I
B
= 50mA
lc= 3A; I
B
= 1A
MIN
BDY78
MAX
UNIT
V(BR)CEO
55
V
V(BR)CBO
90
V
VcE(sat)-i
1.0
V
VcE(sat)-2
3.0
V
VeE(or)
lc= 0.5A; V
CE
= 4V
V
CE
= 90V; V
BE
= -1 .5V
VCE= 90V; V
BE
= -1.5V, T
C
=150°C
V
EB
= TV; l
c
= 0
I
G
= 0.5A; VGE= 4V
lc= 3A; VCE= 4V
lc=0.2A; V
CE
=10V
2.0
V
ICEX
1.0
5.0
1.0
mA
IEBO
mA
hpE-1
25
100
hFE-2
5
fr
8
MHz
Microchip MCU
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