J.E.I±£U ^zmi-L-onaLictoi Lpioaucti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
BDY92
DESCRIPTION
• High DC Current Gain-
: h
FE
=30-120@l
c
=5A
• Excellent Safe Operating Area
• High Current Capability
APPLICATIONS
• Designed for use in switching-control amplifiers,
power
gates,switching regulators, converters, and inverters.
PIN t.BASE
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
VCBO
VCEV
VCEO
VEBO
Ic
I CM
2.B«IITTER
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage V
BE
= -1.5V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@T
C
=S25'C
Junction Temperature
Storage Temperature Range
VALUE
80
80
60
6
10
15
2
60
175
UNIT
V
V
V
V
A
A
A
3. COLLECTOR (CAS^)
TO-3 package
f
1
<
c
i
IB
PC
Tj
Tstg
iinn
W
°C
'C
DIM
MIN
UAX
A
B
C
D
3900
25.30
26.67
0.90
-65-175
£
H
K
L
N
Q
U
V
8.30
1.10
I 40
1.60
7.90
Q
10.92
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
MAX
2.5
UNIT
5.46
11.40
13.50
1675
17.05
19.40
19.62
4.00
4.20
30.00
4.30
3070
Thermal Resistance.Junction to Case
r/w
450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25°C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDY92
MIN
TYP
MAX
UNIT
VcEO(SUS)
Collector-Emitter Sustaining Voltage
lc=100mA;l
B
=0
80
V
VcE(sat)-1
Collector-Emitter Saturation Voltage
lc= 5A; I
B
= 0.5A
0.5
V
VcE(sat)-2
Collector-Emitter Saturation Voltage
|
C
=10A;I
B
= 1A
1.0
V
VeEfsatH
Base-Emitter Saturation Voltage
lc= 5A; I
B
= 0.5A
1.2
V
VeE(sat)-2
Base-Emitter Saturation Voltage
I
C
=10A;I
B
=1A
1.5
V
ICBO
Collector Cutoff Current
V
CB
=80V; I
E
=0
V
C
E=80V;V
B
E=-1.5V
V
CE
=80V;V
B
E=-1 .5V;T
C
=1 50'C
V
EB
=6V; l
c
=0
1.0
1.0
3.0
1.0
mA
Icev
Collector Cutoff Current
mA
IEBO
Emitter Cutoff current
mA
hpE-1
DC Current Gain
lc=1A;V
C E
=2V
30
hFE-2
DC Current Gain
lc= 5A ; V
CE
= 5V
30
120
hpE-3
DC Current Gain
lc=10A;V
C E
=5V
20
fr
Current-Gain — Bandwidth Product
l
c
= 0.5 A;V
CE
= 5V;f
tes
t = 5MHz
70
MHz
Switching Times
ton
Turn-On Time
lc= 5A; |BI= -I
B
2= 0.5A,
V
CC
=30V
0.35
v
s
tstg
Storage Time
1.3
us
tf
Fall Time
0.2
us
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