.zSem.i-Conawito'i
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
,
fi
ne.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BF257
BF258-BF259
HIGH VOLTAGE VIDEO AMPLIFIERS
DESCRIPTION
The BF257, BF258 and BF259 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case. They are particularly designed for video output
stages in CTV and MTV sets, class A audio output
stages and drivers for horizontal deflection circuits.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
Ic
I CM
Plot
Tstg
Parameter
BF257
Collector-base Voltage (I
E
=0)
Collector-emitter Voltage (I
B
= 0)
Emitter-base Voltage (Ic = 0)
Collector Current
Collector Peak Current
Total Power Dissipation at T
amb
< 50 'C
Storage Temperature
Junction Temperature
Value
BF258
BF259
300
300
Unit
V
V
V
mA
160
160
250
250
5
100
200
5
mA
W
C
1
C
- 55 to 200
200
Tj
Qualify Semi-Conductors
BF257-BF258-BF259
THERMAL DATA
Rth j-case
°th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
30
175
"CM/
•CIW
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C unless otherwise specified)
Symbol
ICBO
Parameter
Collector Cutoff Current
(I
E
= 0)
Collector-base
Breakdown Voltage
(I
E
=0)
Collector-emitter
Breakdown Voltage
(lB = 0)
Emittter-base
Breakdown Voltage
dc=0)
Collector-emitter
Saturation Voltage
DC Current Gain
Transition Frequency
Reverse Capacitance
Test Conditions
forBF257
for BF258
for BF259
l
c
=100|jA
V
CB
= 100V
V
CB
= 200 V
V
CB
= 250 V
for BF257
forBF258
for BF259
for BF257
forBF258
for BF259
Min.
Typ.
Max.
50
50
50
Unit
nA
nA
nA
V
V
V
V
V
V
V
V(BR)
CBO
160
250
300
160
250
300
5
V(BR)CEO*
lc = 10mA
V(BR) EBO
IE = 100uA
VCE (sat)*
Ic =30 mA
l
c
=30mA
IB =6 mA
VCE = 10V
25
90
3
1
V
h
F
£*
fy
C
re
*
l
c
= 15mA
l
c
=0
f = 1 MHz
1 %.
VCE = 10V
V
CE
= 3 0 V
MHz
PF
Pulsed : pulse duration = 300 us, duty cycle
DC Current Gain.
«.
h
FE
BO
at
02
I
c
(mA)
Embedded System
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