LS
, U
nc.
TELEPHONE: (973) 376-2922
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
(212)227-6005
FAX: (973) 376-8960
Silicon NPN RF Transistor
BFR106
DESCRIPTION
• Low Noise Figure
NF = 2.5 dB TYP. @V
CE
= 8 V, l
c
= 20 mA, f = 900 MHz
• High Gain
I S
2
ie I
2
= 10.5 dB TYP. @V
CE
= 8 V,l
c
= 70 mA,f = 900 MHz
APPLICATIONS
• Designed for use in low noise .high-gain amplifiers and
linear broadband amplifiers.
-£\"^
\s
5
fT--C>^
-^
SOT- 2 3 package
^'
H | h*
-ill
Marking
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
7T
3
C
VCBO
Collector-Base Voltage
20
V
U
1
j U -
ii
L_Jrjq
I
1 : Base
2: Emitter
3; Collector
VCES
Collector-Emitter Voltage
20
V
/
VCEO
Collector-Emitter Voltage
15
V
\p
L
_j— T^j-
1
r-i)
M
_^'J
k*
•U
mm
I
VEBO
Emitter-Base Voltage
3
V
DIM
lc
WIN
0,37
1.19
2, 10
0,39
1.78
2.65
1. 10
0. -!.5
MAX
0. 51
1. 50
2. 50
1.05
2.05
3, 05
1.30
0,61
0, 17S
Collector Current-Continuous
100
mA
A
B
IB
Base Current-Continuous
12
mA
C
D
PC
Collector Power Dissipation
@T
C
=25'C
0.7
W
r.
H
Tj
Junction Temperature
150
"C
K
L
T
stg
Storage Temperature Range
-65-150
•c
M
0.076
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BFR106
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
l
c
= 1mA; I
B
= 0
15
V
ICES
Collector Cutoff Current
V
CE
= 20V; V
BE
= 0
100
nA
ICBO
Collector Cutoff Current
V
C
B=10V;I
E
=0
0.1
uA
IEBO
Emitter Cutoff Current
VEB= 2V; l
c
= 0
10
uA
HFE
DC Current Gain
l
c
= 70mA ; V
CE
= 8V
40
220
fr
Current-Gain—Bandwidth Product
l
c
= 70mA ; VCE= 8V; f= 500MHz
3.5
5
GHz
COB
Output Capacitance
|
E
=0;V
C B
=10V;f=1MHz
0.95
1.5
PF
PG
Power Gain
l
c
= 70mA ; V
CE
= 8V; f= 900MHz
12.5
dB
dB
dB
dB
dB
dB
PG
Power Gain
l
c
= 70mA ; V
CE
= 8V; f= 1 .8GHz
7.5
I S
21e
1
2
I S
21e
1
2
NF
Insertion Power Gain
lc= 70mA ; V
CE
= 8V; f= 900MHz
10.5
Insertion Power Gain
lc= 70mA ; V
CE
= 8V; f= 1 ,8GHz
5
Noise Figure
l
c
= 20mA ; V
CE
= 8V; f= 900MHz
2.5
NF
Noise Figure
l
c
= 20mA ; V
CE
= 8V; f= 1 .8GHz
4
Embedded System
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