, U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN RF Transistor
BFR35AP
DESCRIPTION
• Low Noise Figure
NF = 1.8 dB TYP. @V
CE
= 6 V, l
c
= 2 mA, f = 900 MHz
• High Gain
I S
21e
I
2
= 12.5 dB TYP. @V
CE
= 8 V,l
c
= 15 mA,f = 900 MHz
APPLICATIONS
• Designed for low distortion broadband amplifiers and
oscillators.
SOT- 2 3 package
£*Mfrf^
r:; :i>"-
i:
f?:::-r^
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
H , h*
III
PARAMETER
VALUE
UNIT
t
t I
3 c
J I
Marking
VCBO
Collector-Base Voltage
20
V
L
J ;
i
|* D - n
G
1
1
L
L
J . _ L
T
1 : Base
2 : Emitter
3 : Collector
VCES
Collector-Emitter Voltage
20
V
H
i
l£1
J
VCEO
Collector-Emitter Voltage
15
V
1_ZJ
H
i *
r
=^J
k.
•It
mm
M(N
0. 57
1, 19
2.10
0.
35
i
MAX
0, =1
M
±
VEBO
Emitter-Base Voltage
2.5
V
D«M
lc
Collector Current-Continuous
30
mA
A
L
IB
i, ;0
2.
50
Base Current-Continuous
4
mA
'•,-
D
PC
:. 05
2.
05
3. 05
1.30
O.cl
0, 178
Collector Power Dissipation
@T
C
=25'C
0.28
W
-
K
i.
:s
'2.
6c
1.10
Tj
Junction Temperature
150
°C
K
L
0. ;c
0. 076
T
s
tg
Storage Temperature Range
-65-150
•c
i<
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
lo press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BFR35AP
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
lc=1mA; I
B
=0
15
V
Ices
Collector Cutoff Current
V
CE
= 20V; V
BE
= 0
10
uA
IOBO
Collector Cutoff Current
V
CB
=10V; I
E
=0
0.1
uA
IEBO
Emitter Cutoff Current
V
6B
= 2.5V; l
c
= 0
100
wA
hFE
DC Current Gain
lc=15mA;V
C
E=8V
40
200
fr
Current-Gain — Bandwidth Product
l
c
= 15mA ; VCE= 8V; f= 500MHz
3.5
5
GHz
COB
Output Capacitance
I
E
=0 ; V
ca
= 10V; f= 1MHz
0.38
0.6
PF
PG
Power Gain
lc= 15mA ; V
CE
= 8V; f= 900MHz
15
dB
PG
Power Gain
l
c
= 15mA ; V
CE
= 8V; f= 1 .8GHz
9.5
dB
1 S
21e
I
2
Insertion Power Gain
lc= 15mA ; V
CE
= 8V; f= 900MHz
12.5
dB
I S
2
le I
2
Insertion Power Gain
lc= 15mA ; V
CE
= 8V; f= 1 .8GHz
7
dB
NF
Noise Figure
lc= 2mA ; V
OE
= 6V; f= 900MHz
1.8
dB
NF
Noise Figure
lc= 2mA ; V
CE
= 6V; f= 1 .8GHz
2.9
dB
京公网安备 11010802033920号
EEWORLD
