, U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN RF Transistor
BFS540
DESCRIPTION
• Low Noise Figure
NF = 1.3 dB TYP. @V
CE
= 8 V, l
c
= 10 mA, f = 900 MHz
• High Current-Gain—Bandwidth Product
fT= 9 GHz TYP. @V
CE
= 8 V, l
c
= 40 mA, f = 1 GHz
APPLICATIONS
• Designed for RF wideband amplifier applications such as
satellite TV
systems and
RF portable communication
equipment with signal frequencies up to 2 GHz.
SOT-323 package
T l l:Base
a c
j_ I
2-.
Emitter
3; Collector
UNIT
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
15
V
mm
DIM
WIN
MAX
VEBO
Emitter-Base Voltage
2.5
V
A
B
0. 30
1.15
2.00
0.65
1.80
0.80
0.10
o. so
1.35
lc
Collector Current-Continuous
120
mA
C'
D
H
2. ;o
120
1. 00
0. 25
PC
Collector Power Dissipation
@T
C
=25'C
0.5
W
Tj
Junction Temperature
175
r
'C
K
M
Tstg
Storage Temperature Range
-65-150
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BFS540
MAX
UNIT
IcBO
Collector Cutoff Current
VCB= 8V; I
E
= 0
0.05
uA
h
FE
DC Current Gain
l
c
= 40mA ; V
CE
= 8V
60
250
ft
COB
Current-Gain—Bandwidth Product
l
c
= 40mA ; V
CE
= 8V; f= 1GHz
g
0.9
GHz
Output Capacitance
l
E
=0;V
C
B=8V;f=1MHz
PF
C
re
Feedback Capacitance
lc=0;V
CB
=8V;f=1MHz
0.6
P
F
1 S
2
ie I
2
Insertion Power Gain
l
c
= 40mA ; V
CE
= 8V; f= 900MHz
12
13
dB
NF
Noise Figure
lc= 10mA ; VCE= 8V; f= 900MHz
1.3
1.8
dB
NF
Noise Figure
lc= 40mA ; V
CE
= 8V; f= 900MHz
1.9
2.4
dB
NF
Noise Figure
lo=10mA; V
CE
= 8V; f= 2GHz
2.1
dB
40C
=
tot
2CO
/CE
= 9 V: T = 25
30C
\
\
h
FE
"5D
:oc
\E
10C
••CD
1
\V
5C
1DD
153T
c
.:°Ci2DO
1CT
2
10-'
1
"C >
Power derating curve
DC current gain as a function of collector
current
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