<£e.mi-C.on.d\ju}ko\
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
BFX30
PINNING
FEATURES
• High current (max.600 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• Switching applications.
DESCRIPTION
PNP transistor in a TO-39 metal package.
PIN
1
2
3
emitter
base
DESCRIPTION
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
T
a m b
<25"C
open emitter
open base
CONDITIONS
MIN.
-
-
-
-
50
100
TYP.
-
-
-
-
90
-
-
MAX.
-65
-65
-600
600
200
-
300
UNIT
Ic
Plot
V
V
mA
mW
MHz
ns
hFE
fl
toff
l
c
= -10 mA; V
C
E = -400 mV
l
c
= -so mA; V
CE
= -10 V; f = 100 MHz
Icon = -150 mA; I BOP =-15 mA; l
Bo
ff = 10 mA
-
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
< 25 "C
CONDITIONS
open emitter
open base
open collector
-
-
-
-
-
-
-
-65
-
-65
MIN.
MAX.
-65
-65
-5
V
V
V
UNIT
lc
ICM
IBM
Plot
Tstg
-600
-600
-200
600
mA
mA
mA
mW
C
J
C
+150
200
Tj
Tamb
+150
C
THERMAL CHARACTERISTICS
SYMBOL
Rfh j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
VALUE
UNIT
300
K/W
Quality Semi-Conductors
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
I
E
= 0;V
C
B = -65V
|
E
= 0;V
CB
= -50V
|
E
= 0;V
CB
= - 5 0 V ; T j = 1 0 0 ° C
IEBO
emitter cut-off current
DC current gain
I
C
= 0 ; V
E B
= - 5 V
I
C
= 0 ; V
E B
= - 3 V
MIN.
-
-
-
-
-
40
50
20
10
TYP. MAX.
UNIT
-
-
-
-
-
-
90
-
-
-
-
-
6
18
-
-
-
-
-
-
-
-500
-50
-2
-500
-100
-
200
-
-
-400
-900
-1.3
-
-
-
45
15
35
300
250
50
nA
nA
HA
nA
nA
hFE
l
c
= -1 mA; V
CE
= -400 mV
VcEsat
VBEsat
l
c
= -10 mA; V
CE
= -400 mV
l
c
= -50 mA; V
CE
= -400 mV
l
c
= -150 mA; V
CE
- -400 mV
collector-emitter saturation voltage l
c
= -150mA; l
B
= -15u.A
base-emitter saturation voltage
l
c
= -30 mA; I
B
= -1 mA
collector capacitance
emitter capacitance
transition frequency
Co
C
e
fT
-
-
l
c
= -150mA; !
B
= -15mA
-
l
E
= i
e
= 0; VcB = - 1 0 V ; f = 1 MHz
-
l
c
= i
c
= 0; V
EB
= -2 V; f = 1 MHz
-
l
c
= -50 mA; V
C
E = -10 V; f = 100 MHz 100
-
-
mV
mV
V
pF
pF
MHz
ns
ns
ns
ns
ns
ns
Switching Times (between 10% and 90% levels); see Fig.2
ton
td
tr
toff
ts
turn-on time
delay time
rise time
turn-off time
storage time
fall time
Icon = -150 mA; !
Bo
n = -15 mA;
l
Bo
ff = 15 mA
-
-
tf
-
-
- seating plane
i_w@[A@B®]—|
10 mm
scale
DIMENSIONS
(mm are
the
original dimensions)
;
UNIT
mm
A
a
b
0
Di
j
k
L
14.2
127
W
j
i
a
i
048 939 833 085 0,95
6.60 '
5.08
6,35
041 9,08 818 0,75 0.75
0.2
45
11
,'
i
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