<£Eml-Condu<!toi tPtoducti, fine.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BFX38
BFX39
BFX40
BFX41
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MECHANICAL DATA
Dimensions in mm (inches)
PNP SILICON EPITAXIAL
TRANSISTOR
9.40 (0.371
7.76(0.306)
8,51
0.335)
k
6.10(0.240)
6 60 (0,260)
i
APPLICATIONS
• General Purpose Industrial Applications
12.70
(0.500)
(O.oasp
1
0.41 (0.016)
din.
0.89
t
I[
2
r
DESCRIPTION
The BFX38-41 are Silicon Planar Epitaxial
PNP transitors in Jedec TO39 metal case,
designed for a wide variety of applications.
/ /"'
k
\ \ (0,100)
TO39 PACKAGE
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
BFX38
BFX39
-55V
-55V
-5V
-1A
0.8W
4W
-55 to 200 °C
ABSOLUTE
MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
VCBO
VCEO
VEBO
Collector- Base Voltage
Collector - Emitter Voltage
Emitter -Base Voltage
Collector Current
Total Power Dissipation T
arn
b < 25°C
Tease <25°C
T
3tg,Tj
BFX40
BFX41
-75V
-75V
Ic
Ptot
Storage and Junction Temperature
ELECTRICAL CHARACTERISTICS
(Tj
=
25°C unless otherwise stated)
Parameter
ICBO
Collector Cutoff Current
Test Conditions
BFX38
BFX39
BFX40
BFX41
BFX38
Min.
I
E
= 0
]
E
Typ. Max. Unit
-0.2
-0.25
-0.2
-0.25
-50
-50
-50
-50
nA
uA
V
CB
= - 40V
T
amb
=125°C
V
CB
= - 50V
T
amb
=125°C
|
c
= -10uA
I
C
= -10MA
.
..
A
l
c
= -10mA
,
._ .
l
c
= -10mA
!
E
= -10uA
=°
nA
uA
I
E
= 0
I
E
= 0
.
n
IB^O
,
n
ln-0
l
c
= 0
V
(BR)CBO
Collector-Base Breakdown Voltage
BFX39
BFX4
°
-55
V
-75
-55
BFX41
BFX38
Collector Emitter Sustaining
VCEO(SUS)*
Vo|tage
BFX39
BFX40
BFX41
V
-75
(BR)EBO
V
CE(SAT)"
Emitter - Base
Breakdown
voltage
Collector- Emitter Saturation
Vo|tgge
ALL
-5
V
-0.12
-0.3
-0.8
-0.9
-0.15
-0.5
-0.9
-1.1
l
c
= -150mA
l
c
= -150mA
I
B
= -15mA
I
B
= -15mA
l
c
= - 500mA IB = - 50mA
l
c
= - 500mA I
B
= - 50mA
BFX38 BFX40
l
c
--100uA
V
CE
= -5V
60
85
60
30
40
25
30
15
25
10
V
V
Base - Emitter Saturation
VBECSAD-
Voltgge
90
130
120
45
70
65
l
c
= - 100mA V
CE
= -5V
l
c
= - 500mA V
CE
= -5V
BFX39 BFX41
l
c
= -100uA V
CE
= -5V
l
c
= . 100mA V
CE
= - 5 V
h
FE
«
DC Current Gain
BFX38
BFX39
BFX40
BFX41
l
c
= . 100mA V
C E
^ - 5 V
Tamb
=
-55°C
BFX38 BFX40
BFX39 BFX41
l
c
= - 500mA V
CE
= -5V
I
C
= -1A
V
CE
= -5V
—
30
15
BFX38
BFX39
BFX40
BFX41
Parameter
f
T
C
EBO
C
CBO
t
on
t
s
t
f
Transitions Frequency
Emitter - Base Capacitance
Collector - Base Capacitance
Turn-on time
Storage Time
Fall Time
Test Conditions
l
c
= -50mA
f=100MHz
l
c
= 0
f=1MHz
V
EB
= -0.5V
V
CE
=-10V
Min.
100
Typ.
150
75
15
33
160
27
Max. Unit
MHz
120
PF
20
100
350
50
ns
|E = O
f=1MHz
l
c
= - 500mA
I
B1
= -50mA
l
c
= - 500mA
I
B1
= I
B2
= -50mA
l
c
= - 500mA
v
CB
= -o.5V
V
cc
= -30V
V
cc
= - 30V
V
cc
= - 30V
I
B1
= - I
B2
= -50mA
Pulsed: pulse duration = 300u.s, duty cycle = 1%
THERMAL CHARACTERISTICS
Rethfl-case) Thermal Resistance Junction to case
^ethG-amb)
Thermal Resistance Junction to ambient
44
219
°C/W
°C/W
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
