.O
ne,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
VHP power MOS transistor
FEATURES
• High power gain
« Low intermodulation distortion
• Easy power control
• Good thermal stability
• Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for industrial and military
applications in the HF/VHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT121 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
A marking code, showing gate-source
voltage (Vcs) information is provided
for matched pair applications. Refer
to 'General' section for further
information.
PINNING-SOT121
PIN
1
2
3
4
BLF147
PIN CONFIGURATION
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
DESCRIPTION
drain
source
gate
source
QUICK REFERENCE DATA
RF performance at T
h
= 25 °C in a common source test circuit.
MODE OF
OPERATION
SSB, class-AB
CW, class-B
f
(MHz)
28
108
V
DS
(V)
28
28
PL
(W)
150 (PEP)
150
GP
(dB)
> 17
typ. 70
no
(%)
> 35
typ. 70
ds
(dB)
< -30
-
d
5
(dB)
< -30
-
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placins orders.
Quality Semi-Conductors
VHP power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
up to T
mb
= 25 °C
BLF147
CONDITIONS
-
-
-
MIN.
-
MAX.
65
20
25
220
150
200
UNIT
V
V
A
W
VDS
±V
GS
ID
Plot
Tstg
-65
-
Tj
°c
°c
THERMAL RESISTANCE
SYMBOL
Rth j-mb
"th mb-h
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
THERMAL RESISTANCE
0.8 K/W
0.2 K/W
300
100
T
h
150
(
c
)
(1) Current is this area may be limited by Rosio
(2) T
mb
= 25"C,
(1) Short-time operation during mismatch
(2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
VHP power MOS transistor
CHARACTERISTICS
Tj = 25 "C unless otherwise specified.
SYMBOL
V(BR)DSS
BLF147
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched pairs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
ID = 100mA; VGS = 0
MIN.
65
-
-
2
—
5
-
-
-
-
-
bss
IGSS
VoSffh)
V
GS
= 0; V
DS
= 28 V
±V
GS
= 20 V; V
DS
= 0
I
D
= 200 mA; V
DS
= 1 0 V
I
D
= 100mA; V
DS
= 10V
AV
GS
TYP. MAX.
UNIT
_
V
-
mA
-
5
1
HA
-
4.5
V
-
100
mV
—
7.5
0.1
37
450
360
55
-
0.15
-
-
-
-
S
Q.
9fs
RDS(on)
IDSX
C
IS
Cos
I
D
= 8 A; V
DS
= 10V
I
D
= 8 A; V
GS
= 10V
VGS = 10 V; V
DS
= 10V
V
G
s = 0; V
DS
= 2 8 V ; f = 1 MHz
V
GS
= 0; V
DS
= 2 8 V ; f = 1 MHz
V
G
s = 0; V
DS
= 2 8 V | f = 1 MHz
A
PF
PF
PF
c
rs
MSI
J
OS0
0
T.C.
(mV/K)
1
I
-2
y
-3
/*
f-
-
- -
7
1
-
i- —
S
4
-
~)---
-5
1C
-2
10~
1
1
ID (A)
10
10
15 . .
VGS (V)
.... 20
V
DS
= 28
V; valid for T
h
= 25 to 70 °C
V
DS
= 10V
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
Fig.5
Drain current as a function of gate-source
voltage, typical values.
VHP power MOS transistor
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
BLF147
SOT121B
D —
:
T
10mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
H
L
p
i
W
1
727
5,82
6,17 ! 5.56
0.16
0,10
12.86 12.83
12.59 12.57
2.67
241
2845 I 7.93
2552 6.32
3.30 ! 445
3.05 I 391
1842 24.90
648
24,63 i 622
1232
12 06
051
002
1.02
H 45°
0.04
0.286 0229
0.006
0,506 0.505 0105 1,120 0.312 0130 0175
inches
0.243 0.219
0004
0.496 0.495 0095 1 005 0.249 0.120 0154 0725
0.98 I 0 255 I 0 485
0,97 i 0 245 0 475
ISSUE DATE
97-06-28
—
J
Microcontroller MCU
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