iJ-*ioaucti, Line,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
VHP power MOS transistor
FEATURES
• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch.
APPLICATIONS
• Large signal amplifier applications in the VHP frequency
range.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
package with a ceramic cap. All leads are isolated from the
flange. A marking code, showing gate-source voltage
(V
G
s) information is provided for matched pair
applications. Refer to the "General" section of the
handbook for further information.
PINNING-SOT121B
BLF246
PIN
1
2
3
4
drain
source
gate
source
DESCRIPTION
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
108
VDS
(V)
28
PL
(W)
80
GP
(dB)
>16
110
(%)
>55
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
VHP power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
T
amb
< 25 "C
CONDITIONS
-
-
-
-
-65
_
MIN.
MAX.
65
±20
13
130
+150
200
BLF246
UNIT
V
V
A
W
"C
"C
VDS
VGS
ID
Ptot
T
s
tg
Tj
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
"th mb-h
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
VALUE
UNIT
1.35
0.2
K/W
K/W
50
MRA931
-
,
Tl
1
b
(A)
10
—
m
^
s
7
^^
\s
s<
2
^
i
— ~-
1
r'
s
1
-T
--
-H
\0
VrjgtV)
1°
2
10-
1
(1) Cur ent is this area may be limited by Roson
(2) T
mb
= 25 "C,
(1) Continuous operation.
(2) Short-time operation during mismatch
Fig.2 DC SOAR.
Fig.3 Power derating curves.
VHP power MOS transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)DSS
BLF246
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched pairs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
WIN.
65
-
-
2
—
3
TYP.
-
_
-
-
—
4.2
0.2
22
225
180
25
MAX.
-
2.5
1
4.5
100
-
0.3
-
-
-
-
UNIT
VGS = 0; I
D
= 50 mA
V
GS
= 0; V
DS
= 28 V
V
G
s = ±20 V; V
DS
= 0
ID = 50mA; V
DS
= 10V
ID = 50mA; VDS = 10V
!
D
= 2 . 5 A o r 5 A ; VDS= 10V
bss
IGSS
Vcsth
V
mA
M
A
V
AV
GS
mV
S
i
i
A
PF
PF
PF
9fs
RoSon
IDSX
C
is
Cos
Crs
I
D
= 5 A; V
GS
= 10V
V
GS
= 10 V; V
DS
= 10V
-
-
VGS = 0; VDS = 28 V; f = 1 MHz -
VGS = 0; VDS = 28 V; f = 1 MHz -
VGS = 0; VDS = 28 V; f = 1 MHz -
GS group indicator
LIMITS
(V)
LIMITS
(V)
GROUP
GROUP
MIN.
A
B
C
D
E
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
O
P
Q
R
S
T
U
V
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
F
G
H
J
K
L
M
N
w
X
Y
z
Test/Measurement
京公网安备 11010802033920号
EEWORLD
