<£s.m.i-(2onau,ctoi \Pioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
VHP power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
PINNING-SOT123
PIN
1
2
3
4
BLV20
QUICK REFERENCE DATA
R.F performance up to Th = 25 °C in an unneutralized common-emitter
class-B circuit
MODE OF
OPERATION
c.w.
VCE
V
28
f
MHz
175
PL
W
8
G
p
dB
>12
T1
%
Z|
Q
1 , 8 + JO, 7
Y
L
mS
> 65
18-J20
PIN CONFIGURATION
DESCRIPTION
collector
emitter
base
emitter
Fig.1 Simplified outline and symbol.
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
B
E = 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f > 1 MHz
R.F. power dissipation (f > 1 MHz); T
mb
= 25 °C
Storage temperature
Operating junction temperature
VCESM
VCEO
VEBO
'C(AV)
max.
max.
max.
max.
max.
max.
max.
65 V
36 V
4 V
0,9 A
2,5 A
20 W
200
C
'CM
Prf
T
stg
-65 to+ 150 "C
T,
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Qunlih/
V
CE
,V»
I Continuous d.c, operation
II Continuous r.f operation
III Short-time operation during mismatch
100
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation; V
CE
< 28 V; f > 1 MHz.
THERMAL RESISTANCE
(dissipation = 8 W; T
mb
= 72,4 °C, i.e. T
h
= 70
°C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
CHARACTERISTICS
Tj = 25 "C
Collector-emitter breakdown voltage
fh j-mb(dc)
Rthj-mb(rf)
10,7 K/W
8,6 K/W
0,3 K/W
Rth
mb-h
V
BE
= 0; l
c
= 2 mA
Collector-emitter breakdown voltage
open base; l
c
= 10 mA
Emitter-base breakdown voltage
open collector; I
E
= 1 mA
Collector cut-off current
V(BR)CES
>
>
>
65 V
36 V
4 V
V
(BR)CEO
V
(BR)EBO
VBE = 0; V
CE
= 36 V
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
RBE= 10 Q
D.C. current gain <
1
)
'CES
<
>
>
typ.
10 to
1 mA
0,5 mJ
0,5 mJ
50
100
ESBO
ESBR
l
c
= 0,4 A; VCE = 5 V
Collector-emitter saturation voltage f)
lc= 1,25 A; IB = 0,25 A
Transition frequency atf = 100 MHz <
1
>
VCE.
isat
fr
f
T
typ.
typ.
typ.
typ.
0,8 V
600 MHz
520 MHz
10 pF
-IE = 0,4 A; V
CB
= 28 V
-IE = 1,25 A; V
CB
= 28 V
Collector capacitance atf = 1 MHz
IE = l
e
= 0; VCB = 28 V
Feedback capacitance at f = 1 MHz
l
c
= 50 mA; VCE = 28 V
Collector-flange capacitance
Note
1.
Measured under pulse conditions: t
p
< 200 (is; 5 < 0,02.
Ore
Cof
typ
typ
7,1 pF
2 pF
Microcontroller MCU
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