,
(Jnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
UHF linear power transistor
FEATURES
« Internal input matching to achieve an optimum
wideband capability and high power gain
• Emitter-ballasting resistors for lower junction
temperatures
• Titanium-platinum-gold metallization ensures long life
and excellent reliability.
APPLICATIONS
• UHF linear amplifiers in television transmitters.
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a 6-lead SOT171A flange package with a ceramic cap.
All leads are isolated from the flange.
2 4 6
BLV59
PINNING-SOT171A
PIN
1
2
3
4
5
6
SYMBOL
DESCRIPTION
emitter
emitter
base
collector
emitter
emitter
e
e
b
c
e
e
O
1
Top view
o]
3
5
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter class-AB circuit.
MODE OF OPERATION
CW, class-AB
f
(MHz)
860
VCE
(V)
25
PL
(W)
30
G
p
(dB)
>7
Tic
(%)
>50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
UHF linear power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
Ic
IC(AV)
I CM
Plot
Tstg
BLV59
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
peak collector current
total power dissipation
storage temperature
operating junction temperature
f > 1 MHz
open base
CONDITIONS
open emitter
open collector
-
-
-
-
-
-
-
T
mb
= 2 5 ° C ; f > 1 MHz
MIN.
MAX.
50
27
3.5
3
3
9
70
+150
200
V
V
V
A
A
A
UNIT
W
'C
a
c
-65
-
Tj
100
10
VCE M
200
(1) Continuous operation (f> 1 MHz).
(2) Short-time operation during mismatch (f > 1 MHz).
Fig.2 DC SOAR.
Fig.3
Power/temperature derating curves.
UHF linear power transistor
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth mb-h
BLV59
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
CONDITIONS
T
mb
= 25 "C, Ptrt = 50 W
VALUE
2.3
0.4
UNIT
K/W
KM/
CHARACTERISTICS
Ti = 25 °C unless otherwise specified.
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
PARAMETER
collector-base breakdown voltage
emitter-base breakdown voltage
collector leakage current
second breakdown energy
DC current gain
collector capacitance
feedback capacitance
collector-flange capacitance
CONDITIONS
open emitter; lc = 50 mA
open collector; I
E
= 10 rnA
VCE = 27 V; V
BE
= 0
VCE = 24 V; l
c
= 2 A
VCE = 25V; lc = 0 ; f = 1 MHz
MIN.
50
27
3.5
-
15
I"-
-
TYP.
-
-
-
-
-
-
44
30
2
MAX.
-
-
-
10
-
-
-
-
-
UNIT
V
V
V
mA
mJ
pF
PF
PF
collector-emitter breakdown voltage open base; l
c
= 100 mA
ICES
E(SBR)
L = 25 mH; f = 50 Hz; R
BE
= 1 0
Q.
4
V
C
B = 25V; l
E
= i
e
= 0;f = 1 MHz -
hFE
C
c
Cre
Cor
100
n
FE
10
20
V
CB
30
(
v
'
Ti = 25 °C.
l
E
= i,, = 0;f = 1 MHz
Fig.4
DC current gain as a function of collector
current; typical values.
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values
UHF linear power transistor
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
BLV59
SOT171A
E, -
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
b
"1
3,20
2,89
c
0.16
0.07
D
925
904
"1
930
899
"1
U
2
V
6.81
607
2.15
1,85
2490 6,00
24.63 5.70
0.980 0.236
0.970 0224
0.
0.
.
m
102
n
,
ft
°
26
U
'
U1
0.268
0,085 0126 0.006 0.364 0.366 0234
inches
0.239
0.073 0.114 0003 0356 0.354 0.226
OQ
U
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