i,, U
na,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
UHF linear power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers
for television
transmitters and transposers. The
excellent d.c. dissipation
properties
for class-A operation are
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal
area. The combination of optimum
thermal design and the application of
gold sandwich metallization
realizes excellent reliability
properties.
The transistor has a 1/4" capstan
envelope with ceramic cap.
BLW33
QUICK REFERENCE DATA
MODE OF OPERATION
class-A; linear amplifier
P
o sync (1)'
*
W
'vision
MHz
VCE
V
Ic
mA
T
h
°C
d
im
<
1
>
dB
G
p
dB
>
10,0
860
860
25
25
300
300
70
25
-60
-60
>
typ.
1,0
1,15 typ. 10,5
Note
1. Three-tone test method (vision carrier-8 dB, sound carrier-7 dB, sideband signal -16 dB), zero dB corresponds to
peak sync level.
PIN CONFIGURATION
PINNING-SOT122A.
PIN
1
2
3
4
DESCRIPTION
collector
emitter
base
emitter
Top View
MBK1S7
Fig.1 Simplified outline. SOT122A.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
UHF linear power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
BLW33
(peak value); V
BE
= 0
open base
Emitter-base voltage (open collector)
Collector current
d.c. or average
(peak value); f> 1 MHz
Total power dissipation up to T
m
b = 25 °C
Storage temperature
Operating junction temperature
VCESM
max.
max.
max.
50 V
30 V
4 V
1,25 A
1,9 A
19,3 W
200
'C
IG
ICM
Ptot
T
s
t
g
T,
max.
max.
max.
max.
-65 to+150 "C
10
"
~
.
l\f GP4
«
_._
--
(A)
[
(1)
>
"'x
1 —
—
T
r
-
70 "CV- '
y"mb T
25
11
\
\\,
""
|l
t -
i
1
10
v
CE(
v,
10
2
(1) Sec
Dnd breakdown limit (independent of temperature)
Fig.2 D.C. SOAR.
Fig.3 Power derating curve vs. temperature.
THERMAL RESISTANCE
(see Fig.4)
From junction to mounting base
(dissipation = 7,5 W; T
mb
= 74,5 °C; i.e. T
h
= 70 °C)
From mounting base to heatsink
Rthj-mb
10,1
0,6
K/W
KA/V
Rth
mb-h
Embedded System
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