(].£.I±£.L) ^zml-t-onauckoi iJ^iodueti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated high power
industrial and military transmitting
equipment in the h.f. and v.h.f. band.
The transistor presents excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions. Transistors are supplied
in matched hpE groups.
The transistor has a
Vi'
flange
envelope with a ceramic cap. All
leads are isolated from the flange.
BLW96
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
'C(ZS)
MODE OF
OPERATION
s.s.b. (class-AB)
c.w. (class-B)
s.s.b. (class-A)
Note
1. r|
dt
at200WP.E.P.
VCE
V
50
50
40
f
MHz
1,6-28
PL
W
G
p
dB
11
%
d
3
dB
d
5
dB
-30
-
-40
Oc)
A
0,1
(6)
(4)
108
28
13,5
>
25 -200 (P. E. P.) >
-30 <
40<
1
>
<
200
typ.
6,5 typ. 67
-
50(P.E.P.)
typ. 19
typ. -40 <
-
PIN CONFIGURATION
PINNING-SOT121B.
PIN
1
DESCRIPTION
collector
emitter
base
emitter
2
3
4
Fig.1 Simplified outline. SOT121 B.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
HF/VHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f> 1 MHz
R.F. power dissipation (f > 1 MHz); T
mb
= 45 °C
Storage temperature
Operating junction temperature
VCESM
VCEO
VEBO
I
C
(AV)
ICM
P
rf
T
s
t
g
Tj
max.
max.
max.
max.
max.
max.
BLW96
110 V
55 V
4 V
12 A
40 A
340 W
-65 to + 150 "C
max.
200
"C
400
10
V
CE
(V)
I Continuous d.c. operation
II Continuous r f operation, f> 1 MHz
III Short-time operation during mismatch, f > 1 MHz
Fig.2 D.C. SOAR.
Fig.3 Power/temperature derating curves.
THERMAL RESISTANCE
(dissipation = 150 W; T
mb
= 100 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
Rthj-mb(dc)
Rthj-mb(rf)
Rth
mb-h
0,63 K/W
0,45 K/W
0,2 K/W
HFA/HF power transistor
CHARACTERISTICS
Tj = 25 'C
Collector-emitter breakdown voltage
V
BE
= 0; l
c
= 50 mA
Collector-emitter breakdown voltage
open base; lc = 200 mA
Emitter-base breakdown voltage
open collector; IE = 20 mA
Collector cut-off current
VBE = 0; V
CE
= 55 V
Second breakdown energy; L = 25 mH, f = 50 Hz
open base
R
BE
=10 Q
D.C. current gain'
1
'
l
c
= 7 A; V
CE
= 5 V
D.C. current gain ratio of matched devices(
1
'
l
c
= 7 A; V
CE
= 5 V
Collector-emitter saturation voltage<
1
)
I
C
= 2 0 A ; I
B
= 4 A
Transition frequency atf = 100 MHz<
2
'
-IE- 7A;V
C B
= 4 5 V
-IE = 20 A; VCB = 45 V
Collector capacitance at f = 1 MHz
IE = l
e
= 0; VCB = 50 V
Feedback capacitance atf = 1 MHz
l
c
= 150mA; V
CE
= 50 V
Collecting-flange capacitance
Notes
1.
2.
Measured under pulse conditions: t
p
< 300 (is; 8 < 0,02.
Measured under pulse conditions: t
p
< 50 |^s; 6 < 0,01.
C
c
C
re
Crf
typ.
typ.
typ.
ESBO
ESBR
typ.
15 to
V
(BR)EBO
V
(BR)CEO
BLW96
V(BR)CES
110
V
55 V
4 V
10
mA
20 mJ
20 mJ
30
50
1,2
1,9 V
235 MHz
245 MHz
typ.
typ.
typ.
280 pF
170 pF
4,4 pF
HF/VHF power transistor
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
BLW96
SOT121B
U
3
-
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
7
7
86
43
b
5.82
5.56
c
0.16
010
D
1286
1259
°1
12,83
1257
F
2.67
2.41
H
L
793
6.32
P
3,30
305
Q
C
4.45
4.4
3.91
3.9
0.175
0.1
0,154
0,1
q
18,42
Ui
U
2
6,4i
U
3
1232
12.06
WT
0.51
002
W
2
mm
inches
2845
25.52
2490
2463
52;
025
0.24
1 02
45°
0.04
0229 0,006
0.219j 0.004
0506
0496
0.505
0,105
0.495 0.095
1.120 0312 0.130
1 005
0.249
0.120
0.725
098
097
0485
0475
OUTLINE
VERSION
SOT121B
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
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