^zmi-L-onauctoi
20 STERN AVE,
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, O
ne.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
UHF linear power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers of TV
transposers and transmitters in band
IV-V, as well as for driver stages in
tube systems.
FEATURES:
• diffused emitter ballasting resistors
for an optimum temperature profile;
• gold sandwich metallization
ensures excellent reliability.
The transistor has a 1/4" capstan
envelope with ceramic cap. All leads
are isolated from the stud.
BLW98
QUICK REFERENCE DATA
R.F. performance in linear amplifier
MODE OF OPERATION
class-A
class-A
Note
1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to
peak sync level.
'vision
MHz
V
C6
V
25
25
Ic
mA
850
850
T
h
C
70
25
d
im
<
1
>
dB
-60
-60
P
o sync m
W
Gp
dB
>
typ.
6,5
7,0
860
860
>
typ.
3,5
4,4
PIN CONFIGURATION
PINNING-SOT122A.
PIN
1
2
3
4
DESCRIPTION
collector
emitter
base
emitter
Top view
Fig.1 Simplified outline. SOT122A.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
UHF linear power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); VBE = 0
open base
Emitter-base voltage (open collector)
Collector current
VCESM
BLW98
max.
max.
max.
50 V
27 V
3,5 V
A
A
W
°C
d.c.
(peak value); f> 1 MHz
Total power dissipation at T
h
= 70 °C
Storage temperature
Operating junction temperature
l
c
ICM
P
to
t
T
s
t
g
T,
max.
2
max.
4
max.
21,5
-65 to+150
max.
200 "C
10
tt
GP7I7
-+-
IG
(A)
1)
l\0 "C^
m
c
40
MGP7I8
Ptot
(W)
30
-^
\
X
\
1
T
h!
=
X
nb = 2 5
-
—1—
—
—h
20
1
--
10-1
1
10
V
CE
(V)
10
2
10
C
)
50
Th(
o
C)
100
(1) Seco nd breakdown limit ( ndependent of temperature)
Fig.2 D.C. SOAR.
Fig
3
Power derating curve vs. temperature.
THERMAL RESISTANCE
(dissipation = 21,25 W; T
mb
= 82,75 °C, T
h
= 70 "C)
From junction to mounting base
From mounting base to heatsink
Rfhj-mb
5,45 K/W
0,6 K/W
Rth
mb-h
UHF linear power transistor
BLW98
R
th j-h
(K/W)
Plot (W)
Fig.4
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink
and junction temperature as parameters. (R^ mb-h = 0,6 K/W.)
Example
Nominal class-A operation (without r.f. signal): V
C
E = 25 V; l
c
= 850 mA; T
h
= 70 °C.
Fig.4 shows:
R
t
hj-h
TJ
max. 6,05 K/W
max.
200
"C
Typical device: Rthj-h
typ.
5,35 K/W
TJ
typ.
183 °C
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