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BSR106WS-TP

Description
1 A, 60 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size198KB,3 Pages
ManufacturerMAS
Websitehttps://www.mas-oy.com
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BSR106WS-TP Overview

1 A, 60 V, SILICON, SIGNAL DIODE

MCC
Micro Commercial Components
TM
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
BSR106WS
Features
Halogen
free available upon request by adding suffix "-HF"
Guard Ring Protection
Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters
High Surge Current Capability
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/RoHS Compliant("P" Suffix
designates RoHS Compliant. See ordering information)
1 Amp Schottky
Barrier Rectifier
60 Volts
SOD-323
A
B
Maximum Ratings
Operating Temperature: -65 to +125
Storage Temperature: -65 to +150
Maximum Thermal Resistance; 500 /W Junction To Ambient
Maximum
Recurrent
Peak Reverse
Voltage
60V
Maximum
DC
Blocking
Voltage
60V
C
E
MCC
Part
Number
BSR106WS
Device
Marking
SM/X6
Maximum
RMS
Voltage
42V
H
D
G
J
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
I
F(AV)
I
FSM
1.0A
10A
T
c
= 90
8.3ms, half sine
DIM
A
B
C
D
E
G
H
J
V
F
0.70V
I
FM
= 1A;
T
J
= 25 (Note 1)
INCHES
MIN
MAX
.090
.107
.063
.071
.045
.053
.031
.045
.010
.016
.004
.018
.004
.010
-----
.006
MM
MIN
2.30
1.60
1.15
0.80
0.25
0.10
0.10
-----
MAX
2.70
1.80
1.35
1.15
0.40
0.45
0.25
0.15
NOTE
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical junction
capacitance
Notes:
SUGGESTED SOLDER
PAD LAYOUT
I
R
0.1mA
T
A
= 25
0.074"
C
J
120pF
Measured at
1.0MHz , V
R
=4.0V
0.027”
1.
Pulse Test: Pulse Width 300usec, Duty Cycle 2%
0.022”
Revision:
C
www.mccsemi.com
1 of 2
2013/01/01

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BSR106WS-TP BSR106WS
Description 1 A, 60 V, SILICON, SIGNAL DIODE 1 A, 60 V, SILICON, SIGNAL DIODE

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