CYStech Electronics Corp.
Spec. No. : C811E3
Issued Date : 2015.06.08
Revised Date :
Page No. : 1/5
PNP Epitaxial Planar High Current (High Performance) Transistor
BTP955E3
Features
•
5 Amps continuous current, up to 10 Amps peak current
•
Very low saturation voltage
•
Excellent gain characteristics specified up to 3 Amps
•
Extremely low equivalent on resistance, R
CE(SAT)
=90m
Ω
at 3A
•
RoHS compliant package
BV
CEO
I
C
R
CE(SAT)
-140V
-5A
90mΩ typ.
Symbol
BTP955E3
Outline
TO-220
B：Base
C：Collector
E：Emitter
BCE
Ordering Information
Device
BTP955E3-0-UB-G
Package
TO-220
(Pb-free lead plating)
Shipping
50 pcs / tube, 20 tubes/ box , 4 boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
BTP955E3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation @T
A
=25°C
Power Dissipation @T
C
=25°C
Operating and Storage Temperature Range
Note: 1.Single pulse, Pw≤10ms
Spec. No. : C811E3
Issued Date : 2015.06.08
Revised Date :
Page No. : 2/5
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
D
Tj ; Tstg
Limits
-180
-140
-6
-5
-10
(Note 1)
-1
2
31
-55 ~ +150
Unit
V
A
W
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
θJA
R
θJC
Value
62.5
4
Unit
°C/W
Characteristics
(Ta=25°C, unless otherwise specified)
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
CE(sat)
3
*V
CE(sat)
4
*V
BE(sat)
*V
BE(on)
R
CE(sat)
h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
f
T
Cob
Min.
-180
-140
-6
-
-
-
-
-
-
-
-
-
100
150
75
-
-
-
Typ.
-210
-170
-8
-
-
-40
-70
-110
-270
-930
-830
90
200
200
140
10
110
40
Max.
-
-
-
-50
-10
-60
-120
-150
-370
-1110
-950
123
-
400
-
-
-
-
Unit
V
nA
Test Conditions
I
C
=-100μA
I
C
=-10mA
I
E
=-100μA
V
CB
=-150V
V
EB
=-6V
I
C
=-100mA, I
B
=-5mA
I
C
=-500mA, I
B
=-50mA
I
C
=-1A, I
B
=-100mA
I
C
=-3A, I
B
=-300mA
I
C
=-3A, I
B
=-300mA
V
CE
=-5V, I
C
=-3A
I
C
=-3A, I
B
=-300mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-1A
V
CE
=-5V, I
C
=-3A
V
CE
=-5V, I
C
=-10A
V
CE
=-10V, I
C
=-100mA, f=50MHz
V
CB
=-20V, f=1MHz
*Pulse Test: Pulse Width
≤380μs,
Duty Cycle≤2%
mV
m
Ω
-
-
-
-
MHz
pF
BTP955E3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Collector Current
1000
10000
VCE(SAT)
Saturation Voltage---(mV)
Spec. No. : C811E3
Issued Date : 2015.06.08
Revised Date :
Page No. : 3/5
Saturation Voltage vs Collector Current
Current Gain---HFE
1000
IC=50IB
IC=20IB
100
VCE=5V
VCE=2V
VCE=1V
100
10
IC=10IB
10
1
10
100
1000
10000
Collector Current---IC(mA)
1
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
VBE(SAT) @ IC=10IB
On Vottage vs Collector Current
10000
VBE(ON)@VCE=5V
1000
On Voltage---(mV)
1
10
100
1000
Collector Current---IC(mA)
10000
1000
100
100
1
10
100
1000
Collector Current---IC(mA)
10000
Power Derating Curve
2.5
Power Dissipation---PD(W)
Power Dissipation---PD(W)
2
1.5
1
0.5
0
0
50
100
150
Ambient Temperature---TA(℃)
200
35
30
25
20
15
10
5
0
0
Power Derating Curve
50
100
150
200
Case Temperature---TC(℃)
BTP955E3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C811E3
Issued Date : 2015.06.08
Revised Date :
Page No. : 4/5
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTP955E3
CYStek Product Specification
CYStech Electronics Corp.
TO-220 Dimension
Marking:
Spec. No. : C811E3
Issued Date : 2015.06.08
Revised Date :
Page No. : 5/5
Device Name
Date Code
955
□□□□
1
3-Lead TO-220 Plastic Package
CYStek Package Code: E3
2
3
Style: Pin 1.Base 2.Collector 3.Emitter
4.Collector
*: Typical
DIM
A
A1
b
b1
c
c1
D
E
Millimeters
Min.
Max.
4.470
4.670
2.520
2.820
0.710
0.910
1.170
1.370
0.310
0.530
1.170
1.370
10.010
10.310
8.900
8.500
Inches
Min.
Max.
0.176
0.184
0.099
0.111
0.028
0.036
0.046
0.054
0.012
0.021
0.046
0.054
0.406
0.394
0.350
0.335
DIM
E1
e
e1
F
h
L
L1
Φ
Millimeters
Min.
Max.
12.060
12.460
2.540*
4.980
5.180
2.890
2.590
0.000
0.300
13.400 13.800
3.560
3.960
3.735
3.935
Inches
Min.
Max.
0.475
0.491
0.100*
0.196
0.204
0.114
0.102
0.000
0.012
0.528
0.543
0.140
0.156
0.147
0.155
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: Pure tin plated.
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP955E3
CYStek Product Specification
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