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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
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TELEPHONE: (973) 376-2922
(212)227-6005
Silicon NPN Power Transistors
BUS14
DESCRIPTION
•With TO-3 package
•High voltage ,high speed
APPLICATIONS
•Converters
•Inverters
•Switching regulators
•Motor controls
PINNING (See Fig.2)
PIN
1
2
3
DESCRIPTION
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=25 )
SYMBOL
VCBO
VGEO
V
EBO
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
mb
=25
Open emitter
Open base
CONDITIONS
MAX
850
400
9
30
50
6
10
250
200
UNIT
V
V
V
A
A
A
A
W
Open collector
Ic
I CM
IB
IBM
PT
Tj
Tstg
-65-200
THERMAL CHARACTERISTICS
SYMBOL
Rthj-mb
PARAMETER
Thermal resistance from junction to mounting base
VALUE
0.7
UNIT
/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished
by
NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
BUS14
SYMBOL
CONDITIONS
lc=0.1A; I
B
=0; L=25mH
MIN
TYP.
MAX
UNIT
VcEO(SUS)
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
400
V
VcE(sat)
I
C
=20A; I
B
=4A
1.5
V
VsE(sat)
lc=20A; I
B
=4A
VcE=RatedBVcEo; V
BE
=0
T
c
=125
V
EB
=9V; l
c
=0
1.7
1
5
10
V
ICES
mA
mA
IEBO
(IRE
lc=2A ; V
CE
=5V
15
50
Switching times
Turn-on time
Storage time
Fall time
lc=20A; I
B
1=- I
B
2=4A
1.0
4.0
0.8
us
ton
ts
us
tf
us