^Sztni-L-onauatoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
acti, Una.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BUX22
HIGH CURRENT NPN SILICON TRANSISTOR
.
.
.
.
SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
APPLICATIONS
. MOTOR CONTROL
. LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
. HIGH POWER TO-3 PACKAGE
DESCRIPTION
The BUX22 is a silicon multiepitaxial planar NPN
transistor in modified Jedec TO-3 metal case,
intended for use in switching and linear
applications in military and industrial equipment.
TO-3
(version P)
INTERNAL SCHEMATIC DIAGRAM
(TAB)
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEX
VCEO
VEBO
Ic
ICM
IB
Plot
Tstg
Tj
Parameter
Collector-base Voltage (!E = 0)
Collector-emitter Voltage (VBE = - 1.5V)
Collector-emitter Voltage (l
s
= 0)
Emitter-base Voltage (Ic = 0)
Collector Current
Collector Peak Current (t
p
= 10 ms)
Base Current
Total Power Dissipation at T
cas
e ^ 25 °C
Storage Temperature
Max Operating Junction Temperature
Value
300
300
250
7
40
50
8
350
Unit
V
V
V
V
A
A
A
W
°C
°C
-65 to 200
200
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BUX22
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
0.5
°C/W
ELECTRICAL CHARACTERISTICS
(Tease = 25 °C unless otherwise specified)
Symbol
ICEO
ICEX
Parameter
Collector Cut-off
Current (I
B
= 0)
Collector Cut-off
Current
Emitter Cut-off Current
(lc = 0)
Collector-Emitter
Sustaining Voltage
Emitter-Base Voltage
(lc = 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Second Breakdown
Collector Current
Transistor Frequency
Turn-on Time
Storage Time
Fall Time
Clamped E
5
/b
Collector Current
Test Conditions
VOE = 200 V
Min,
Typ.
Max.
3
Unit
mA
V
CE
= 300V
Tease = 125 °C
V
BE
= -1.5V
V
B
E = -1.5V
3
12
1
250
7
rnA
mA
rnA
V
V
VCE = 3 0 0 V
IEBO
VcEO(sus)*
VEB = 5 V
Ic = 200 mA
IE = 50 mA
Ic = 10 A
lc = 2 0 A
lc = 2 0 A
Ic = 10 A
lc = 2 0 A
VCE = 140 V
VCE = 20 V
VCE = 15 V
f = 10 MHz
lc = 20 A
V
CC
= 100V
lc = 20 A
I
B
2 = - 2 . 5 A
Ic = 2 A
IBI = 2 . 5 A
IBI = 2 . 5 A
V
CC
=100V
25
VEBO
VcE(sat)*
VBE(sat)*
hFE*
Is/b
IB = 1 A
IB = 2. 5 A
IB = 2. 5 A
VCE = 4 V
VcE=4V
t = 1s
t = 1s
20
10
0.15
17.5
10
0.2
0.32
1.1
1
1.5
1.5
60
V
V
V
A
A
MHz
fr
ton
0.22
1.5
0.17
1.3
J1S
t
s
tf
2
0.5
US
us
A
V
c
i
amp
= 250 V
L = 500 uH
t
Pulsed: Pulse duration = 300ns, duty cycle < 2 %
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